| No. |
Part Name |
Description |
Manufacturer |
| 1 |
HGTD6N50E1 |
6A/ 400V and 500V N-Channel IGBTs |
Intersil |
| 2 |
HGTD6N50E1S |
6A/ 400V and 500V N-Channel IGBTs |
Intersil |
| 3 |
HGTH12N50E1 |
10A/ 12A/ 400V and 500V N-Channel IGBTs |
Intersil |
| 4 |
HGTH20N50E1 |
15A/ 20A/ 400V and 500V N-Channel IGBTs |
Intersil |
| 5 |
HGTH20N50E1D |
20A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes |
Intersil |
| 6 |
HGTP10N50E1 |
10A/ 12A/ 400V and 500V N-Channel IGBTs |
Intersil |
| 7 |
HGTP10N50E1D |
10A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes |
Intersil |
| 8 |
HGTP15N50E1 |
15A/ 20A/ 400V and 500V N-Channel IGBTs |
Intersil |
| 9 |
MTB8N50E |
TMOS POWER FET 8.0 AMPERES 500 VOLTS |
Motorola |
| 10 |
MTB8N50E |
8 Amp D2PAK Surface Mount Products, N-Channel, VDSS 500 |
ON Semiconductor |
| 11 |
MTB8N50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 12 |
MTD1N50E |
TMOS POWER FET 1.0 AMPERE 500 VOLTS RDS(on) = 5.0 OHM |
Motorola |
| 13 |
MTD1N50E |
OBSOLETE - Power MOSFET 1 Amp, 500 Volts |
ON Semiconductor |
| 14 |
MTD1N50E-D |
Power MOSFET 1 Amp, 500 Volts N-Channel DPAK |
ON Semiconductor |
| 15 |
MTD2N50E |
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM |
Motorola |
| 16 |
MTD2N50E |
OBSOLETE - Power MOSFET 2 Amps, 500 Volts |
ON Semiconductor |
| 17 |
MTD2N50E-D |
Power MOSFET 2 Amps, 500 Volts N-Channel DPAK |
ON Semiconductor |
| 18 |
MTE30N50E |
TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.150 OHM |
Motorola |
| 19 |
MTE53N50E |
TMOS POWER FET 53 AMPERES 500 VOLTS RDS(on) = 0.080 OHM |
Motorola |
| 20 |
MTP1N50E |
TMOS POWER FET 1.0 AMPERES 500 VOLTS RDS(on) = 5.0 OHM |
Motorola |
| 21 |
MTP1N50E |
OBSOLETE - Power MOSFET 1 A, 500 V N-Channel TO-220 |
ON Semiconductor |
| 22 |
MTP1N50E-D |
Power MOSFET 1 Amp, 500 Volts N-Channel TO-220 |
ON Semiconductor |
| 23 |
MTP2N50E |
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM |
Motorola |
| 24 |
MTP3N50E |
TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS |
Motorola |
| 25 |
MTP3N50E |
3 Amp TO-220AB, N-Channel, VDSS 500 |
ON Semiconductor |
| 26 |
MTP3N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 27 |
MTP4N50E |
TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS |
Motorola |
| 28 |
MTP4N50E |
Trans MOSFET N-CH 500V 4A 3-Pin(3+Tab) TO-220 Rail |
New Jersey Semiconductor |
| 29 |
MTP4N50E |
4 Amp TO-220AB, N-Channel, VDSS 500 |
ON Semiconductor |
| 30 |
MTP4N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
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