| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N6516 |
Diode Switching 3KV 3.5A 2-Pin |
New Jersey Semiconductor |
| 2 |
2N6516 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 3 |
2N6516 |
0.625W General Purpose NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE |
Continental Device India Limited |
| 4 |
2N6516 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 5 |
2N6516 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 6 |
2N6516 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 7 |
AON6516 |
Single LV MOSFETs (12V - 30V) |
Alpha & Omega Semiconductor |
| | | |
