| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1421 |
Bulk Metal Foil Technology, 12 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
| 2 |
1422 |
Bulk Metal Foil Technology, 16 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
| 3 |
2041-6201-00 |
Unmatched tees non isolated |
MA-Com |
| 4 |
2041-6202-00 |
Unmatched tees non isolated |
MA-Com |
| 5 |
2041-6203-00 |
Unmatched tees non isolated |
MA-Com |
| 6 |
2041-6204-00 |
Unmatched tees non isolated |
MA-Com |
| 7 |
22C040 |
32 to 40 SEC INSTANT VOICE ROM |
Integrated Silicon Solution Inc |
| 8 |
24C016 |
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM |
Integrated Silicon Solution Inc |
| 9 |
2502-2 |
MOUNTING BRACKET KIT INSTALLATION INSTRUCTIONS |
etc |
| 10 |
277 |
Precision Isolation Amplifier High CMV/CMR,+-5V Floating |
Intronics |
| 11 |
277A |
Precision Isolation Amplifier High CMV/CMR,+-5V Floating |
Intronics |
| 12 |
277J |
Precision Isolation Amplifier High CMV/CMR,+-5V Floating |
Intronics |
| 13 |
277K |
Precision Isolation Amplifier High CMV/CMR,+-5V Floating |
Intronics |
| 14 |
2N2322 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 15 |
2N2323 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 16 |
2N2324 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 17 |
2N2325 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 18 |
2N2326 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 19 |
2N4212 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 20 |
2N4213 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 21 |
2N4214 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 22 |
2N4215 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 23 |
2N4216 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 24 |
2N5431 |
Silicon annular unijunction transistor characterized primarily for low interbase-voltage operation in sensing, pulse triggering, and timing circuits |
Motorola |
| 25 |
311M09 |
COMMISSION INTERNATIONALE DE KARTING - FIA |
etc |
| 26 |
363D |
LM363 Precision Instrumentation Amplifier |
National Semiconductor |
| 27 |
3N142 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
General Electric Solid State |
| 28 |
3N153 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
General Electric Solid State |
| 29 |
41C16257 |
256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
Integrated Silicon Solution Inc |
| 30 |
42S16400A |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Silicon Solution Inc |
| | | |
