| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1421 |
Bulk Metal Foil Technology, 12 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
| 2 |
1422 |
Bulk Metal Foil Technology, 16 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
| 3 |
174CQY |
Solid-state photo-relays consisting of a GaAs electroluminiscent diode and a silicon n-p-n photo-transistor |
Mullard |
| 4 |
24AA164 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please Consider 24AA16 Instead. |
Microchip |
| 5 |
24C01SC |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please Consider 24LC01SC Instead The 24C01SC is a 1K bit Electrically Erasable PROM with bondpad positions optimized for smart card specific ap |
Microchip |
| 6 |
24C02B |
Note:This product is not recommended for new designs. Please consider 24LC02B instead.The 24C01B is a 2K bit Electrically Erasable PROM memory organized as a single block of 256 x 8-bit with an I2C™ compatible 2-wire serial |
Microchip |
| 7 |
24C08B |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please Consider 24LCO8B Instead The 24C01B is an 8K bit Electrically Erasable PROM memory organized as four blocks of 256 x 8-bit with an I
| Microchip | |
| 8 |
24C16B |
Note:This product is not recommended for new designs. Please consider 24LC16B instead.The 24C16B is an 8K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit with an I2C™ compatible 2-wire serial |
Microchip |
| 9 |
24FC32 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please Consider 24LC65 Instead |
Microchip |
| 10 |
24FC65 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please Consider 24LC65 |
Microchip |
| 11 |
24LC09 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device.Please Consider 24LC08B InsteadThe 24LC09 is an 8-Kbit Electrically Erasable PROM (EEPROM) that is designed with a custom device address to meet the requir |
Microchip |
| 12 |
24LC09-I/P |
Note:This product has become 'Obsolete' and is no longer offered as a viable device.Please Consider 24LC08B InsteadThe 24LC09 is ... |
Microchip |
| 13 |
24LC09-I/SN |
Note:This product has become 'Obsolete' and is no longer offered as a viable device.Please Consider 24LC08B InsteadThe 24LC09 is ... |
Microchip |
| 14 |
24LC09T-I/SN |
Note:This product has become 'Obsolete' and is no longer offered as a viable device.Please Consider 24LC08B InsteadThe 24LC09 is ... |
Microchip |
| 15 |
93C86 |
Note:This product is not recommended for new designs. Please consider 93C86C instead. |
Microchip |
| 16 |
93C86-E/P |
Note:This product is not recommended for new designs. Please consider 93C86C instead. |
Microchip |
| 17 |
93C86-E/SN |
Note:This product is not recommended for new designs. Please consider 93C86C instead. |
Microchip |
| 18 |
93C86T-E/SN |
Note:This product is not recommended for new designs. Please consider 93C86C instead. |
Microchip |
| 19 |
AB-037 |
MOUNTING CONSIDERATIONS FOR TO-3 PACKAGES |
Burr Brown |
| 20 |
AB-091 |
VOLTAGE-FEEDBACK AMPLIFIERS vs CURRENT-FEEDBACK AMPLIFIERS: BANDWIDTH AND DISTORTION CONSIDERATIONS |
Burr Brown |
| 21 |
AN-421 |
Application Note - Semiconductor noise figure considerations |
Motorola |
| 22 |
AN1161 |
POWER-UP, RESET AND BROWN-OUT CONSIDERATIONS WHEN USING FLASH MEMORIES |
SGS Thomson Microelectronics |
| 23 |
AN12 |
AT&T 62411 Design Considerations Jitter and Synchronization |
Cirrus Logic |
| 24 |
AN202 |
Technical Consideration for Migrating CS5460-Based Design to CS5460A-Based Design |
Cirrus Logic |
| 25 |
AN56 |
NOVRAM AUTOSTORE Considerations |
Xicor |
| 26 |
BAV40 |
Multiple Diode, diode array consisting of 8 silicon planar epitaxial diodes |
Philips |
| 27 |
BCR400 |
Application Considerations for the Integrated Bias Control Circuits |
Infineon |
| 28 |
CQY13 |
Solid-state photo-relays consisting of a GaAs electroluminiscent diode and a silicon n-p-n photo-transistor |
Mullard |
| 29 |
CQY23 |
Solid-state photo-relays consisting of a GaAs electroluminiscent diode and a silicon n-p-n photo-transistor |
Mullard |
| 30 |
DME150 |
150 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip |
Acrian |
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