| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1738U |
1738U-Type Small Form-Factor Erbium-Doped Fiber Amplifier with Uncooled Pump |
Agere Systems |
| 2 |
1738UAA |
1738U-Type Small Form-Factor Erbium-Doped Fiber Amplifier with Uncooled Pump |
Agere Systems |
| 3 |
1738UBA |
1738U-Type Small Form-Factor Erbium-Doped Fiber Amplifier with Uncooled Pump |
Agere Systems |
| 4 |
1738UCA |
Small form-ractor erbium-doped fiber amplifier with uncooled pump. Connector FC/APC. Electrical connection: male 2 x 10 at 2 mm spacing. |
Agere Systems |
| 5 |
1N4148 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
| 6 |
1N4149 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
| 7 |
1N4152 |
Silicon epitaxial planar diode for extreme speed switching applications |
AEG-TELEFUNKEN |
| 8 |
1N4153 |
Silicon epitaxial planar diode for extreme speed switching applications |
AEG-TELEFUNKEN |
| 9 |
1N4446 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
| 10 |
1N4447 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
| 11 |
1N4448 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
| 12 |
1N4449 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
| 13 |
1N5156 |
Silicon high-frequency step-recovery power varactor epitaxial-passivated device |
Motorola |
| 14 |
1N5157 |
Silicon high-frequency step-recovery power varactor epitaxial-passivated device |
Motorola |
| 15 |
1SV283B |
Variable capacitance diode for electronic tuning applications |
TOSHIBA |
| 16 |
2CR-5 |
Lithium Batteries (For Europe) - Cylindrical type CR series / Standard type |
Panasonic |
| 17 |
2N176 |
PNP germanium power transistor for economical power switching circuits and commercial grade power amplifier applications |
Motorola |
| 18 |
2N2196 |
Power NPN transistor Epitaxial Planar - Fast switching |
SESCOSEM |
| 19 |
2N2197 |
Power NPN transistor Epitaxial Planar - Fast switching |
SESCOSEM |
| 20 |
2N2728 |
PNP germanium high-current power transistor especially designed for solar cells, thermo-electric generators, sea cells, fuel cells, and 1.5-volt batteries |
Motorola |
| 21 |
2N350A |
PNP germanium power transistor for economical power switching applications |
Motorola |
| 22 |
2N351A |
PNP germanium power transistor for economical power switching applications |
Motorola |
| 23 |
2N3740 |
PNP Power Transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 24 |
2N3741 |
PNP Power Transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 25 |
2N376A |
PNP germanium power transistor for economical power switching applications |
Motorola |
| 26 |
2N4901 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 27 |
2N4902 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 28 |
2N4903 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 29 |
2N4904 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| 30 |
2N4905 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching |
SESCOSEM |
| | | |
