| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2KBP01 |
100V Bridge in a D-44 package |
International Rectifier |
| 2 |
2KBP01 |
BRIDGE RECTIFIERS |
Micro Commercial Components |
| 3 |
2KBP01 |
Diode Rectifier Bridge Single 100V 2A 4-Pin D-44 |
New Jersey Semiconductor |
| 4 |
2KBP01G |
2 AMP GLASS PASSIVATED SILICON BRIDGE RECTIFIER |
Fuji Electric |
| 5 |
2KBP01M |
Bridge Rectifiers |
Fairchild Semiconductor |
| 6 |
2KBP01M |
GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER |
General Semiconductor |
| 7 |
2KBP01M |
Diode Rectifier Bridge Single 100V 2A 4-Pin Case KBP |
New Jersey Semiconductor |
| 8 |
2KBP01M |
IN-LINE GLASS PASSIVATED SINGLE PHASE RECTIFIER BRIDGE |
TRSYS |
| 9 |
2KBP01M |
Glass Passivated Single-Phase Bridge Rectifier, Forward Current 2.0 A |
Vishay |
| 10 |
2KBP01M |
2.0A GLASS PASSIVATED BRIDGE RECTIFIER |
Won-Top Electronics |
| 11 |
2KBP01M/3N254 |
2.0 Ampere Bridge Rectifiers |
Fairchild Semiconductor |
| 12 |
3KBP01M |
Diodes |
Vishay |
| 13 |
3LP01C |
P-Channel Small Signal MOSFET -30V -0.1A 10.4Ohm Single CP |
ON Semiconductor |
| 14 |
3LP01C |
Ultrahigh-Speed Switching Applications |
SANYO |
| 15 |
3LP01M |
P-Channel Small Signal MOSFET -30V -100mA 10.4 OhmsSingle MCP |
ON Semiconductor |
| 16 |
3LP01M |
PicoMOSFET Series |
SANYO |
| 17 |
3LP01N |
PicoMOSFET Series |
SANYO |
| 18 |
3LP01S |
P-Channel Small Signal MOSFET -30V -0.1A 10.4Ohm Single SMCP |
ON Semiconductor |
| 19 |
3LP01S |
PicoMOSFET Series |
SANYO |
| 20 |
3LP01SP |
PicoMOSFET Series |
SANYO |
| 21 |
3LP01SS |
PicoMOSFET Series |
SANYO |
| 22 |
5962P0151101QXC |
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 23 |
5962P0151101TXC |
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 24 |
5962P0153201QYA |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 25 |
5962P0153201QYC |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 26 |
5962P0153201QYX |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish factory option. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 27 |
5962P0153201TYA |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 28 |
5962P0153201TYC |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 29 |
5962P0153201TYX |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish factory option. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 30 |
5962P0153301QXC |
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
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