| No. |
Part Name |
Description |
Manufacturer |
| 1 |
FCP11N60 |
600V N-Channel SuperFET |
Fairchild Semiconductor |
| 2 |
FCP11N60F |
600V N-Channel MOSFET |
Fairchild Semiconductor |
| 3 |
FCP11N60N |
N-Channel SupreMOS� MOSFET 600V, 10.8A, 299m? |
Fairchild Semiconductor |
| 4 |
FQP11N40 |
400V N-Channel MOSFET |
Fairchild Semiconductor |
| 5 |
FQP11N40C |
400V N-Channel Advanced QFET C-series |
Fairchild Semiconductor |
| 6 |
HGTP11N120CN |
43A, 1200V, NPT Series N-Channel IGBT |
Fairchild Semiconductor |
| 7 |
HGTP11N120CN |
43A/ 1200V/ NPT Series N-Channel IGBT |
Intersil |
| 8 |
IPP11N03LA |
OptiMOS®2 - Power packages |
Infineon |
| 9 |
KP11N60D |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 10 |
KP11N60F |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 11 |
MGP11N60E |
Insulated Gate Bipolar Transistor |
Motorola |
| 12 |
MGP11N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 13 |
MGP11N60ED |
SHORT CIRCUIT RATED LOW ON-VOLTAGE |
ON Semiconductor |
| 14 |
MGP11N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 15 |
PHP11N06LT |
N-channel TrenchMOS transistor Logic level FET |
Philips |
| 16 |
PHP11N50E |
PowerMOS transistors Avalanche energy rated |
Philips |
| 17 |
SPP11N60C2 |
for lowest Conduction Losses & fastest Switching |
Infineon |
| 18 |
SPP11N60C3 |
for lowest Conduction Losses & fastest Switching |
Infineon |
| 19 |
SPP11N60CFD |
for lowest Conduction Losses & fastest Switching |
Infineon |
| 20 |
SPP11N60S5 |
for lowest Conduction Losses |
Infineon |
| 21 |
SPP11N65C3 |
for lowest Conduction Losses & fastest Switching |
Infineon |
| 22 |
SPP11N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ... |
Infineon |
| 23 |
STP11N52K3 |
N-channel 525 V, 0.41 Ohm, 10 A SuperMESH3(TM) Power MOSFET in TO-220 package |
ST Microelectronics |
| 24 |
STP11N65M2 |
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package |
ST Microelectronics |
| 25 |
STP11N65M5 |
N-channel 650 V, 0.43 Ohm, 9 A MDmesh(TM) V Power MOSFET in TO-220 package |
ST Microelectronics |
| 26 |
STP11NB40 |
N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET |
SGS Thomson Microelectronics |
| 27 |
STP11NB40 |
N - CHANNEL 400V - 0.48Ohm - 10.7A - TO-220/TO-220FP PowerMESH MOSFET |
SGS Thomson Microelectronics |
| 28 |
STP11NB40 |
N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET |
ST Microelectronics |
| 29 |
STP11NB40FP |
N - CHANNEL 400V - 0.48Ohm - 10.7A - TO-220/TO-220FP PowerMESH MOSFET |
SGS Thomson Microelectronics |
| 30 |
STP11NB40FP |
N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET |
SGS Thomson Microelectronics |
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