| No. |
Part Name |
Description |
Manufacturer |
| 1 |
FCP11N60 |
600V N-Channel SuperFET |
Fairchild Semiconductor |
| 2 |
FCP11N60F |
600V N-Channel MOSFET |
Fairchild Semiconductor |
| 3 |
FCP11N60N |
N-Channel SupreMOS� MOSFET 600V, 10.8A, 299m? |
Fairchild Semiconductor |
| 4 |
KP11N60D |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 5 |
KP11N60F |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |
Korea Electronics (KEC) |
| 6 |
MGP11N60E |
Insulated Gate Bipolar Transistor |
Motorola |
| 7 |
MGP11N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 8 |
MGP11N60ED |
SHORT CIRCUIT RATED LOW ON-VOLTAGE |
ON Semiconductor |
| 9 |
MGP11N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 10 |
SPP11N60C2 |
for lowest Conduction Losses & fastest Switching |
Infineon |
| 11 |
SPP11N60C3 |
for lowest Conduction Losses & fastest Switching |
Infineon |
| 12 |
SPP11N60CFD |
for lowest Conduction Losses & fastest Switching |
Infineon |
| 13 |
SPP11N60S5 |
for lowest Conduction Losses |
Infineon |
| | | |
