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Datasheets for RA06

Datasheets found :: 22
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No. Part Name Description Manufacturer
1 4MBP100RA060 IGBT-IPM Fuji Electric
2 4MBP75RA060 IGBT-IPM Fuji Electric
3 6MBP100RA060 IGBT-IPM Fuji Electric
4 6MBP200RA060 IGBT-IPM(600V/200A) Fuji Electric
5 6MBP300RA060 IGBT-IPM(600V/300A) Fuji Electric
6 6MBP50RA060 IGBT-IPM(600V/50A) Fuji Electric
7 6MBP75RA060 IGBT-IPM(600V/75A) Fuji Electric
8 7MBP200RA060 IGBT-IPM(600V/200A) Fuji Electric
9 7MBP300RA060 IGBT-IPM(600V / 300A) Fuji Electric
10 CRA06E 4 or 8 Terminal Package with 2 or 4 Isolated Resistors, Wraparound Termination, Inner Electrode Protection, Flow & Reflow Solderable, Automatic Placement Capability Vishay
11 CRA06P Thick Film Resistor Array, 8 terminal package with 4 isolated resistors, Automatic placement capability, Flow solderable, Inner electrode protection, Thick film resistance element Vishay
12 CRA06S 4 or 8 Terminal Package with 2 or 4 Isolated Resistors, Wraparound Termination, Inner Electrode Protection, Flow & Reflow Solderable, Automatic Placement Capability Vishay
13 MRA0610 MICroAMP 3-9-18-40W, Broadband 600-1000MHz, Internally Compensated, Gold Metalized, MTTF Data TRW
14 MRA0610-18 MICroAMP 18W, Broadband 600-1000MHz, Internally Compensated, Gold Metalized, MTTF Data TRW
15 MRA0610-18A NPN SILICON RF POWER TRANSISTOR Advanced Semiconductor
16 MRA0610-3 MICroAMP 3W, Broadband 600-1000MHz, Internally Compensated, Gold Metalized, MTTF Data TRW
17 MRA0610-40 MICroAMP 40W, Broadband 600-1000MHz, Internally Compensated, Gold Metalized, MTTF Data TRW
18 MRA0610-9 MICroAMP 9W, Broadband 600-1000MHz, Internally Compensated, Gold Metalized, MTTF Data TRW
19 TRA06E Thin Film, Resistor Array, Flow solderable, Automatic placement capability, Inner electrode protection, Wrap around termination, Low noise, High frequency applications Vishay
20 TRA06E0803101BRT1 Thin Film/ Resistor Array Vishay
21 TRA06E0803101DRT1 Thin Film/ Resistor Array Vishay
22 TRA06E0803101FRT1 Thin Film/ Resistor Array Vishay


Datasheets found :: 22
Page: | 1 |



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