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Datasheets for RDS

Datasheets found :: 2863
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 24LC21A The 24LC21A is a 128 x 8-bit dual-mode Serial Electrically Erasable PROM designed to meet the plug-and-play requirements of today’s advanced monitors. The 24LC21A represents a simple, low-cost route to meeting the stringent standards Microchip
2 24LCS21 The 24LCS21 is a 128 x 8-bit dual-mode Serial Electrically Erasable PROM designed to meet the plug-and-play requirements of today’s advanced monitors. The 24LCS21 represents a simple, low-cost route to meeting the stringent standards Microchip
3 28LV64A Note:This product has become 'Obsolete' and is no longer offered as a viable device for design.28LV64A is a 64K bit CMOS Parallel EEPROM organized as 8K words by 8 bits. The 28LV64A is accessed like a static RAM for the read or write cycle Microchip
4 2N7002 0.2W Power MOSFET, 60V Vdss, 0.115A Id, 7.5Om Rds SemiWell Semiconductor
5 2SJ598 P-ch power MOSFET 60V RDS(on)MAX.=130m ohm TO-251, TO-252 NEC
6 2SJ598-Z P-ch power MOSFET 60V RDS(on)MAX.=130m ohm TO-251, TO-252 NEC
7 2SJ600 Pch power MOSFET 60V RDS(on)1=50m ohm MAX. MP-3 NEC
8 2SJ600-Z Pch power MOSFET 60V RDS(on)1=50m ohm MAX. MP-3 NEC
9 2SJ601 Pch power MOSFET 60V RDS(on)1=31m ohm MAX. TO-251(MP-3), TO-252(MP-3Z) NEC
10 2SJ601-Z Pch power MOSFET 60V RDS(on)1=31m ohm MAX. TO-251(MP-3), TO-252(MP-3Z) NEC
11 2SJ602 Pch power MOSFET 60V RDS(on)MAX=73m ohm TO-220AB,TO-262,TO-263 NEC
12 2SJ602-S Pch power MOSFET 60V RDS(on)MAX=73m ohm TO-220AB,TO-262,TO-263 NEC
13 2SJ602-ZJ Pch power MOSFET 60V RDS(on)MAX=73m ohm TO-220AB,TO-262,TO-263 NEC
14 2SJ603 Pch power MOSFET 60V RDS(on)MAX=48m ohm TO-220AB,TO-262,TO-263 NEC
15 2SJ603-S Pch power MOSFET 60V RDS(on)MAX=48m ohm TO-220AB,TO-262,TO-263 NEC
16 2SJ603-ZJ Pch power MOSFET 60V RDS(on)MAX=48m ohm TO-220AB,TO-262,TO-263 NEC
17 448IRF Power MOSFET(Vdss=500V/ Rds(on)=0.60ohm/ Id=11A) International Rectifier
18 50S116T-5 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA Ceramate
19 50S116T-6 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA Ceramate
20 50S116T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate
21 54S416T-5 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA Ceramate
22 54S416T-6 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA Ceramate
23 54S416T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate
24 84068 Tape and Reel Standards Vishay
25 A223 RDS Decoder SANYO
26 ABFF037C ABFF037C STANDARDSPECIFICATIONS etc
27 AD8018ARU-REEL7 Nominal:5V; Max:8V; 565-650mW; rail-to-rail, high-output current xDSL line driver amplifier. For xDSL USB, PCI, PCMCIA cards, consumer DSL modems, twisted pair line driver Analog Devices
28 ADP3333ARM-1.5 0.3-16V; high accuracy ultralow Iq, 300mA, anyCAP low dropout regulator. For cellular phones, PCMCIA cards, personal digital assistants (PDAs), DSP/ASIC supplies Analog Devices
29 ADP3333ARM-1.8 0.3-16V; high accuracy ultralow Iq, 300mA, anyCAP low dropout regulator. For cellular phones, PCMCIA cards, personal digital assistants (PDAs), DSP/ASIC supplies Analog Devices
30 ADP3333ARM-2.5 0.3-16V; high accuracy ultralow Iq, 300mA, anyCAP low dropout regulator. For cellular phones, PCMCIA cards, personal digital assistants (PDAs), DSP/ASIC supplies Analog Devices


Datasheets found :: 2863
Page: | 1 | 2 | 3 | 4 | 5 |



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