| No. |
Part Name |
Description |
Manufacturer |
| 1 |
IRF231 |
N-Channel Power MOSFETs/ 12A/ 150-200 V |
Fairchild Semiconductor |
| 2 |
IRF231 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
| 3 |
IRF231 |
8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 4 |
IRF231 |
Trans MOSFET N-CH 150V 9A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 5 |
IRF231 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 6 |
IRF231 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 9A |
Siliconix |
| 7 |
IRF231R |
Trans MOSFET N-CH 150V 9A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 8 |
MRF231 |
3.5W - 90MHz RF Power Transistor NPN Silicon |
Motorola |
| 9 |
RF2310 |
WIDEBAND GENERAL PURPOSE AMPLIFIER |
RF Micro Devices |
| 10 |
RF2310PCBA |
WIDEBAND GENERAL PURPOSE AMPLIFIER |
RF Micro Devices |
| 11 |
RF2311 |
GENERAL PURPOSE AMPLIFIER |
RF Micro Devices |
| 12 |
RF2311PCBA |
GENERAL PURPOSE AMPLIFIER |
RF Micro Devices |
| 13 |
RF2312 |
5 - 725 MHz General Purpose Linear Amplifier |
Qorvo |
| 14 |
RF2312 |
LINEAR GENERAL PURPOSE AMPLIFIER |
RF Micro Devices |
| 15 |
RF2312PCBA |
LINEAR GENERAL PURPOSE AMPLIFIER |
RF Micro Devices |
| 16 |
RF2314 |
GENERAL PURPOSE LOW NOISE AMPLIFIER |
RF Micro Devices |
| 17 |
RF2314PCBA |
GENERAL PURPOSE LOW NOISE AMPLIFIER |
RF Micro Devices |
| 18 |
RF2317 |
DC - 3000 MHz Linear CATV Amplifier |
Qorvo |
| 19 |
RF2317 |
LINEAR CATV AMPLIFIER |
RF Micro Devices |
| 20 |
RF2317PCBA |
LINEAR CATV AMPLIFIER |
RF Micro Devices |
| 21 |
RF2318 |
LINEAR BROADBAND AMPLIFIER |
RF Micro Devices |
| 22 |
RF2318PCBA-H |
LINEAR BROADBAND AMPLIFIER |
RF Micro Devices |
| 23 |
RF2318PCBA-L |
LINEAR BROADBAND AMPLIFIER |
RF Micro Devices |
| | | |
