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Datasheets for RF24

Datasheets found :: 174
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 ARF240 FAST RECOVERY DIODE POSEICO SPA
2 ARF240S25 FAST RECOVERY DIODE POSEICO SPA
3 ARF241 FAST RECOVERY DIODE POSEICO SPA
4 ARF241S25 FAST RECOVERY DIODE POSEICO SPA
5 BAL-NRF01D3 50Ω nominal input / conjugate match balun to nRF24LE1 & nRF51822-QFAA, with integrated harmonic filter ST Microelectronics
6 CZRF24VB Zener Diodes, PD=0.2Watts, VZ=24V Comchip Technology
7 CZRF24VB-HF Halogen Free Zener Diodes, PD=0.2Watts, VZ=24V Comchip Technology
8 ELJRF24NGFB Chip Inductors - High Freq. Use (Non Magnetic Core) Panasonic
9 ELJRF24NJFB Chip Inductors - High Freq. Use (Non Magnetic Core) Panasonic
10 HD6417750RF240 1.5V; 240MHz; 32-bit RISC microprocessor Hitachi Semiconductor
11 IRF240 N-Channel Power MOSFETs/ 18A/ 150-200V Fairchild Semiconductor
12 IRF240 200V Single N-Channel Hi-Rel MOSFET in a TO-204AE package International Rectifier
13 IRF240 18A/ 200V/ 0.180 Ohm/ N-Channel Power MOSFET Intersil
14 IRF240 Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
15 IRF240 N-CHANNEL POWER MOSFET Samsung Electronic
16 IRF240 N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS SemeLAB
17 IRF240-243 N-Channel Power MOSFETs/ 18A/ 150-200V Fairchild Semiconductor
18 IRF240SMD N.CHANNEL POWER MOSFET SemeLAB
19 IRF241 N-Channel Power MOSFETs/ 18A/ 150-200V Fairchild Semiconductor
20 IRF241 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 18A. General Electric Solid State
21 IRF241 16A and 18A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs Intersil
22 IRF241 N-CHANNEL POWER MOSFET Samsung Electronic
23 IRF242 N-Channel Power MOSFETs/ 18A/ 150-200V Fairchild Semiconductor
24 IRF242 16A and 18A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs Intersil
25 IRF242 N-CHANNEL POWER MOSFET Samsung Electronic
26 IRF243 N-Channel Power MOSFETs/ 18A/ 150-200V Fairchild Semiconductor
27 IRF243 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 16A. General Electric Solid State
28 IRF243 16A and 18A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs Intersil
29 IRF243 N-CHANNEL POWER MOSFET Samsung Electronic
30 IRF244 14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs Intersil


Datasheets found :: 174
Page: | 1 | 2 | 3 | 4 | 5 |



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