| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AUIRF3305 |
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package |
International Rectifier |
| 2 |
AUIRF3315S |
Automotive Q101 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package |
International Rectifier |
| 3 |
AUIRF3315STRL |
Automotive Q101 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package |
International Rectifier |
| 4 |
AUIRF3315STRR |
Automotive Q101 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package |
International Rectifier |
| 5 |
CZRF33VB |
Zener Diodes, PD=0.2Watts, VZ=33V |
Comchip Technology |
| 6 |
CZRF33VB-HF |
Halogen Free Zener Diodes, PD=0.2Watts, VZ=33V |
Comchip Technology |
| 7 |
EB74 |
Application Note - A 10 watt 225-400MHz amplifier - MRF331 |
Motorola |
| 8 |
ELJRF33NGFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
| 9 |
ELJRF33NJFB |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
| 10 |
IRF330 |
N-Channel Power MOSFETs/ 5.5A/ 350 V/400V |
Fairchild Semiconductor |
| 11 |
IRF330 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
| 12 |
IRF330 |
400V Single N-Channel Hi-Rel MOSFET in a TO-204AA package |
International Rectifier |
| 13 |
IRF330 |
5.5A/ 400V/ 1.000 Ohm/ N-Channel Power MOSFET |
Intersil |
| 14 |
IRF330 |
Trans MOSFET N-CH 400V 5.5A 3-Pin(2+Tab) TO-204AA |
New Jersey Semiconductor |
| 15 |
IRF330 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 16 |
IRF330-333 |
N-Channel Power MOSFETs/ 5.5A/ 350 V/400V |
Fairchild Semiconductor |
| 17 |
IRF3305 |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 18 |
IRF3305PBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 19 |
IRF330R |
Trans MOSFET N-CH 55V 140A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 20 |
IRF331 |
N-Channel Power MOSFETs/ 5.5A/ 350 V/400V |
Fairchild Semiconductor |
| 21 |
IRF331 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
| 22 |
IRF331 |
4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs |
Intersil |
| 23 |
IRF331 |
Trans MOSFET N-CH 350V 5.5A 3-Pin (2+Tab) TO-3 |
New Jersey Semiconductor |
| 24 |
IRF331 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 25 |
IRF3315 |
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 26 |
IRF3315L |
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 27 |
IRF3315L |
Trans MOSFET N-CH 150V 21A 3-Pin(3+Tab) TO-262 |
New Jersey Semiconductor |
| 28 |
IRF3315LPBF |
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 29 |
IRF3315PBF |
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 30 |
IRF3315S |
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
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