Datasheets for RGE POWE

Datasheets found :: 14 Page: | 1 |

No.	Part Name	Description	Manufacturer
1	2SB816	PNP Epitaxial Planar Silicon Transistors For LF Power Amplifier, 50W Output Large Power Switching Applications	SANYO
2	2SD1046	NPN Epitaxial Planar Silicon Transistors For LF Power Amplifier, 50W Output Large Power Switching Applications	SANYO
3	MVS4000	Mashine vision mini strobe. Input voltage 11-15 VDC, input current 1.10 amps (max), flashlamp voltage 600 volts +-3%, discharge power 10 watts(max).	PerkinElmer Optoelectronics
4	MVS4100	Mashine vision strobe. Input voltage 90-230+-10% VAC 50/60 Hz, input current 2.0 amps (max), flashlamp voltage 600 volts +-3%, discharge power 20 watts(max).	PerkinElmer Optoelectronics
5	MVS4200	Mashine vision strobe. Input voltage 90-230+-10% VAC 50/60 Hz, input current 2.0 amps (max), flashlamp voltage 600 volts +-3%, discharge power 20 watts(max).	PerkinElmer Optoelectronics
6	MVS5000	Mashine vision strobe. Input voltage 11-15 VDC, input current 4.5 amps at 12 V (30Hz), flashlamp voltage 600 volts +-3%, discharge power 43 watts(max).	PerkinElmer Optoelectronics
7	STH15NB50FI	N-CHANNLE ENHANCEMENT MODE VERY LOW GATE CHARGE POWER MOS TRANSISTOR	SGS Thomson Microelectronics
8	STH15NB50FI	N-CHANNLE ENHANCEMENT MODE VERY LOW GATE CHARGE POWER MOS TRANSISTOR	ST Microelectronics
9	STW15NB50	N-CHANNLE ENHANCEMENT MODE VERY LOW GATE CHARGE POWER MOS TRANSISTOR	SGS Thomson Microelectronics
10	STW15NB50	N-CHANNLE ENHANCEMENT MODE VERY LOW GATE CHARGE POWER MOS TRANSISTOR	ST Microelectronics
11	STW20NB50	N-CHANNEL ENHANCEMENT MODE VERY LOW GATE CHARGE POWER MOSFET	ST Microelectronics
12	STY16NA90	N - CHANNEL 900V - 0.5 Ohm - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET	SGS Thomson Microelectronics
13	STY16NA90	N-CHANNEL 900 V - 0.5 OHM - 16 A - EXTREMELY LOW GATE CHARGE POWER MOSFET	ST Microelectronics
14	STY25NA60	N - CHANNEL 600V - 0.225W - 25 A - Max247 EXSTREMELY LOW GATE CHARGE POWER MOSFET	SGS Thomson Microelectronics

Datasheets found :: 14 Page: | 1 |