No. |
Part Name |
Description |
Manufacturer |
1 |
1N4187A |
ZENER DIODES DOUBLE SLUG TYPE CONSTRUCTION |
New Jersey Semiconductor |
2 |
1N4187B |
ZENER DIODES DOUBLE SLUG TYPE CONSTRUCTION |
New Jersey Semiconductor |
3 |
1N4188A |
ZENER DIODES DOUBLE SLUG TYPE CONSTRUCTION |
New Jersey Semiconductor |
4 |
1N4188B |
ZENER DIODES DOUBLE SLUG TYPE CONSTRUCTION |
New Jersey Semiconductor |
5 |
1N4189A |
ZENER DIODES DOUBLE SLUG TYPE CONSTRUCTION |
New Jersey Semiconductor |
6 |
1N4189B |
ZENER DIODES DOUBLE SLUG TYPE CONSTRUCTION |
New Jersey Semiconductor |
7 |
1N4190A |
ZENER DIODES DOUBLE SLUG TYPE CONSTRUCTION |
New Jersey Semiconductor |
8 |
1N4190B |
ZENER DIODES DOUBLE SLUG TYPE CONSTRUCTION |
New Jersey Semiconductor |
9 |
1N4191A |
ZENER DIODES DOUBLE SLUG TYPE CONSTRUCTION |
New Jersey Semiconductor |
10 |
1N4191B |
ZENER DIODES DOUBLE SLUG TYPE CONSTRUCTION |
New Jersey Semiconductor |
11 |
1N4192A |
ZENER DIODES DOUBLE SLUG TYPE CONSTRUCTION |
New Jersey Semiconductor |
12 |
1N4192B |
ZENER DIODES DOUBLE SLUG TYPE CONSTRUCTION |
New Jersey Semiconductor |
13 |
1N4193A |
ZENER DIODES DOUBLE SLUG TYPE CONSTRUCTION |
New Jersey Semiconductor |
14 |
1N4193B |
ZENER DIODES DOUBLE SLUG TYPE CONSTRUCTION |
New Jersey Semiconductor |
15 |
BSM35GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Doubled diode area) |
Siemens |
16 |
C67070-A2111-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Doubled diode area) |
Siemens |
17 |
DS_K4D263238D |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
18 |
HMC115 |
GaAs DOUBLE-BALANCED 2 TO 6 GHz MIXER |
Hittite Microwave Corporation |
19 |
K4D261638E |
2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
Samsung Electronic |
20 |
K4D261638E-TC2A |
2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
Samsung Electronic |
21 |
K4D261638E-TC33 |
2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
Samsung Electronic |
22 |
K4D261638E-TC36 |
2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
Samsung Electronic |
23 |
K4D261638E-TC40 |
2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
Samsung Electronic |
24 |
K4D261638E-TC50 |
2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM |
Samsung Electronic |
25 |
K4D263238A |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
26 |
K4D263238A-GC33 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
27 |
K4D263238A-GC36 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
28 |
K4D263238A-GC40 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
29 |
K4D263238A-GC45 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
30 |
K4D263238A-GC50 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
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