| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AGS11151 |
GS1 Acceleration Sensor/AGS11151 |
Panasonic |
| 2 |
AGS11351 |
GS1 Acceleration Sensor/AGS11351 |
Panasonic |
| 3 |
FBR46 |
MINIATURE RELAY 2 POLES1 to 2 A (FOR SIGNAL SWITCHING) FBR46 SERIES |
Fujitsu Microelectronics |
| 4 |
IRF6706S2 |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 17 amperes optimized with low on resistance. |
International Rectifier |
| 5 |
IRF6706S2TR1PBF |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 17 amperes optimized with low on resistance. |
International Rectifier |
| 6 |
IRF6706S2TRPBF |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 17 amperes optimized with low on resistance. |
International Rectifier |
| 7 |
IRF6708S2 |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 13 amperes optimized with low on resistance. |
International Rectifier |
| 8 |
IRF6708S2TR1PBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 13 amperes optimized with low on resistance. |
International Rectifier |
| 9 |
IRF6708S2TRPBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 13 amperes optimized with low on resistance. |
International Rectifier |
| 10 |
IRF6709S2 |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 12 amperes optimized with low on resistance. |
International Rectifier |
| 11 |
IRF6709S2TR1PBF |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 12 amperes optimized with low on resistance. |
International Rectifier |
| 12 |
IRF6709S2TRPBF |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 12 amperes optimized with low on resistance. |
International Rectifier |
| 13 |
IRF6710S2 |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 12 amperes optimized with low on resistance. |
International Rectifier |
| 14 |
IRF6710S2TR1PBF |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 12 amperes optimized with low on resistance. |
International Rectifier |
| 15 |
IRF6710S2TRPBF |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 12 amperes optimized with low on resistance. |
International Rectifier |
| 16 |
IRF6720S2 |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 11 amperes optimized with low on resistance. |
International Rectifier |
| 17 |
IRF6720S2TR1PBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 11 amperes optimized with low on resistance. |
International Rectifier |
| 18 |
IRF6810S |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 16 amperes optimized with low on resistance. |
International Rectifier |
| 19 |
IRF6810STR1PBF |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 16 amperes optimized with low on resistance. |
International Rectifier |
| 20 |
IRF6810STRPBF |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 16 amperes optimized with low on resistance. |
International Rectifier |
| 21 |
MT90737AM |
DS3/DS1 MUX/DEMUX (M13). For single-board M13 multiplexer |
Mitel Semiconductor |
| 22 |
NGTB15N120FLW |
IGBT 1200V 15A FS1 Solar/UPS |
ON Semiconductor |
| 23 |
NGTB15N120IHL |
IGBT 1200V 15A FS1 Induction Heating |
ON Semiconductor |
| 24 |
NGTB15N120L |
IGBT 1200V 15A FS1 Gen Mkt |
ON Semiconductor |
| 25 |
NGTB20N120IHL |
IGBT 1200V 20A FS1 Induction Heating |
ON Semiconductor |
| 26 |
NGTB20N120IHS |
IGBT 1200V 20A FS1 Induction Heating |
ON Semiconductor |
| 27 |
NGTB20N120L |
IGBT 1200V 20A FS1 Gen Mkt |
ON Semiconductor |
| 28 |
NGTB25N120FLW |
IGBT 1200V 25A FS1 Solar/UPS |
ON Semiconductor |
| 29 |
NGTB25N120IHLW |
IGBT 1200V 25A FS1 Induction Heating |
ON Semiconductor |
| 30 |
NGTB25N120L |
IGBT 1200V 25A FS1 Gen Mkt |
ON Semiconductor |
| | | |
