| No. |
Part Name |
Description |
Manufacturer |
| 1 |
50S116T |
512K x 2 Banks x 16 BITS SDRAM |
Ceramate |
| 2 |
50S116T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
| 3 |
50S116T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
| 4 |
50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
| 5 |
BAS116T |
Switching Diodes |
Diodes |
| 6 |
BAS116T |
Single low leakage current switching diode |
Nexperia |
| 7 |
BAS116T |
Single low leakage current switching diode |
NXP Semiconductors |
| 8 |
BAS116T-7-F |
Switching Diodes |
Diodes |
| 9 |
BAS116TT1 |
BAS116T Switching Diode |
ON Semiconductor |
| 10 |
BAS116TT1 |
BAS116T Switching Diode |
ON Semiconductor |
| 11 |
TM50S116T |
SDRAM |
etc |
| | | |
