| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1S311 |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 2 |
1S311H |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 3 |
1SS311 |
Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching Applications |
TOSHIBA |
| 4 |
AUIRLS3114Z |
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package |
International Rectifier |
| 5 |
AUIRLS3114ZTRL |
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package |
International Rectifier |
| 6 |
BTS3110N |
Smart Low Side Switches - 42V, 200mΩ, 1.4A, SOT223 |
Infineon |
| 7 |
BTS3118D |
Smart Low Side Switches - 42V, 100mΩ, 2.4A, TO252 |
Infineon |
| 8 |
BTS3118N |
Protected Low Side Switch |
Infineon |
| 9 |
C67078-S3110-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) |
Siemens |
| 10 |
C67078-S3111-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) |
Siemens |
| 11 |
C67078-S3112-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) |
Siemens |
| 12 |
C67078-S3113-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) |
Siemens |
| 13 |
C67078-S3114-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) |
Siemens |
| 14 |
C67078-S3115-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) |
Siemens |
| 15 |
C67078-S3117-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) |
Siemens |
| 16 |
C67078-S3118-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) |
Siemens |
| 17 |
DB2S311 |
Schottky Barrier Diodes |
Panasonic |
| 18 |
DB2S31100L |
Schottky Barrier Diodes |
Panasonic |
| 19 |
DS3112 |
TEMPE T3 E3 Multiplexer, 3.3V T3/E3 Framer and M13/E13/G.747 MUX |
MAXIM - Dallas Semiconductor |
| 20 |
DS3112+ |
TEMPE T3 E3 Multiplexer, 3.3V T3/E3 Framer and M13/E13/G.747 MUX |
MAXIM - Dallas Semiconductor |
| 21 |
DS3112D1 |
TEMPE T3 E3 Multiplexer, 3.3V T3/E3 Framer and M13/E13/G.747 MUX |
MAXIM - Dallas Semiconductor |
| 22 |
DS3112D1+ |
TEMPE T3 E3 Multiplexer, 3.3V T3/E3 Framer and M13/E13/G.747 MUX |
MAXIM - Dallas Semiconductor |
| 23 |
DS3112N |
TEMPE T3/E3 Multiplexer 3.3V T3/E3 Framer and M13/E13/G.747 Mux |
MAXIM - Dallas Semiconductor |
| 24 |
DS3112N+ |
TEMPE T3 E3 Multiplexer, 3.3V T3/E3 Framer and M13/E13/G.747 MUX |
MAXIM - Dallas Semiconductor |
| 25 |
DS3112NC1 |
TEMPE T3 E3 Multiplexer, 3.3V T3/E3 Framer and M13/E13/G.747 MUX |
MAXIM - Dallas Semiconductor |
| 26 |
DS3112ND1E |
TEMPE T3 E3 Multiplexer, 3.3V T3/E3 Framer and M13/E13/G.747 MUX |
MAXIM - Dallas Semiconductor |
| 27 |
DS3112RD |
DS3/E3 Multiplexer Reference Design |
MAXIM - Dallas Semiconductor |
| 28 |
FMS3110 |
Triple Video D/A Converters 3 x 10 bit, 150 Ms/s |
Fairchild Semiconductor |
| 29 |
FMS3110KRC |
100MHz Triple 10-Bit Video D/A Converters |
Fairchild Semiconductor |
| 30 |
FMS3110KRC_NL |
100MHz Triple 10-Bit Video D/A Converters |
Fairchild Semiconductor |
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