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Datasheets for S6416

Datasheets found :: 127
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 HYB39S64160AT-10 64 MBit Synchronous DRAM Siemens
2 HYB39S64160AT-8 64 MBit Synchronous DRAM Siemens
3 HYB39S64160AT-8B 64 MBit Synchronous DRAM Siemens
4 HYB39S64160ATL-10 64Mbit Synchronous DRAM Siemens
5 HYB39S64160ATL-8 64Mbit Synchronous DRAM Siemens
6 HYB39S64160ATL-8B 64Mbit Synchronous DRAM Siemens
7 HYB39S64160BT-7 64M SDRAM Component Infineon
8 HYB39S64160BT-7,5 64M SDRAM Component Infineon
9 HYB39S64160BT-7.5 64-MBit Synchronous DRAM Infineon
10 HYB39S64160BT-8 64M SDRAM Component Infineon
11 IRHMS64160 100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a Low Ohmic TO-254AA package. Also available in 300, 600 and 1000kRad. International Rectifier
12 K1S64161CC 4Mx16 bit Page Mode Uni-Transistor Random Access Memory Samsung Electronic
13 K4S641632C 1M x 16Bit x 4 Banks Synchronous DRAM Samsung Electronic
14 K4S641632C-TC/L10 1M x 16Bit x 4 Banks Synchronous DRAM Samsung Electronic
15 K4S641632C-TC/L1H 1M x 16Bit x 4 Banks Synchronous DRAM Samsung Electronic
16 K4S641632C-TC/L1L 1M x 16Bit x 4 Banks Synchronous DRAM Samsung Electronic
17 K4S641632C-TC/L60 1M x 16Bit x 4 Banks Synchronous DRAM Samsung Electronic
18 K4S641632C-TC/L70 1M x 16Bit x 4 Banks Synchronous DRAM Samsung Electronic
19 K4S641632C-TC/L75 1M x 16Bit x 4 Banks Synchronous DRAM Samsung Electronic
20 K4S641632C-TC/L80 1M x 16Bit x 4 Banks Synchronous DRAM Samsung Electronic
21 K4S641632C-TC10 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 66MHz Samsung Electronic
22 K4S641632C-TC1H 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 100MHz Samsung Electronic
23 K4S641632C-TC1L 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 100MHz Samsung Electronic
24 K4S641632C-TC60 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 166MHz Samsung Electronic
25 K4S641632C-TC70 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 143MHz Samsung Electronic
26 K4S641632C-TC75 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 133MHz Samsung Electronic
27 K4S641632C-TC80 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz Samsung Electronic
28 K4S641632C-TL10 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 66MHz Samsung Electronic
29 K4S641632C-TL1H 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 100MHz Samsung Electronic
30 K4S641632C-TL1L 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 100MHz Samsung Electronic


Datasheets found :: 127
Page: | 1 | 2 | 3 | 4 | 5 |



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