| No. |
Part Name |
Description |
Manufacturer |
| 1 |
CSA614 |
25.000W Low Frequency PNP Plastic Leaded Transistor. 55V Vceo, 3.000A Ic, 40 - 240 hFE. |
Continental Device India Limited |
| 2 |
CSA614O |
25.000W Low Frequency PNP Plastic Leaded Transistor. 55V Vceo, 3.000A Ic, 70 - 140 hFE. |
Continental Device India Limited |
| 3 |
CSA614R |
25.000W Low Frequency PNP Plastic Leaded Transistor. 55V Vceo, 3.000A Ic, 40 - 80 hFE. |
Continental Device India Limited |
| 4 |
CSA614Y |
25.000W Low Frequency PNP Plastic Leaded Transistor. 55V Vceo, 3.000A Ic, 120 - 240 hFE. |
Continental Device India Limited |
| 5 |
FSA6157 |
Low RON SPDT Negative-Swing Audio or Video Switch |
Fairchild Semiconductor |
| 6 |
IRISA6131 |
INTEGRATED SWITCHER |
International Rectifier |
| 7 |
KSA614 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 8 |
KSA614 |
-80 V, -3 A, PNP epitaxial silicon transistor |
Samsung Electronic |
| 9 |
KSA614 |
Silicon PNP Power Transistors TO-220 package |
Savantic |
| 10 |
KSA614O |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 11 |
KSA614OTU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 12 |
KSA614R |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 13 |
KSA614RTU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 14 |
KSA614Y |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 15 |
KSA614YTSTU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 16 |
KSA614YTU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 17 |
NX8567SA610-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1561.013 nm. Frequency 192.05 THz. FC-UPC connector. |
NEC |
| 18 |
NX8567SA610-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1561.013 nm. Frequency 192.05 THz. SC-UPC connector. |
NEC |
| 19 |
NX8567SA614-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1561.419 nm. Frequency 192.00 THz. FC-UPC connector. |
NEC |
| 20 |
NX8567SA614-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1561.419 nm. Frequency 192.00 THz. SC-UPC connector. |
NEC |
| 21 |
NX8567SA618-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1561.826 nm. Frequency 191.95 THz. FC-UPC connector. |
NEC |
| 22 |
NX8567SA618-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1561.826 nm. Frequency 191.95 THz. SC-UPC connector. |
NEC |
| 23 |
RSA61 |
Thyristor trigger and control modules, rectifier and synchroniser |
Mullard |
| 24 |
SA611 |
1GHz low voltage LNA and mixer |
Philips |
| 25 |
SA611DH |
1 GHz low voltage LNA and mixer |
Philips |
| 26 |
SA611DK |
1 GHz low voltage LNA and mixer |
Philips |
| 27 |
SA612 |
Double-balanced mixer and oscillator |
Philips |
| 28 |
SA612A |
Double-balanced mixer and oscillator |
Philips |
| 29 |
SA612AD |
Double-balanced mixer and oscillator |
NXP Semiconductors |
| 30 |
SA612AD |
Double-balanced mixer and oscillator |
Philips |
| | | |
