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Datasheets found :: 21 Page: | 1 |
Nr. Part Name Description Manufacturer
1 CSA614 25.000W Low Frequency PNP Plastic Leaded Transistor. 55V Vceo, 3.000A Ic, 40 - 240 hFE. Continental Device India Limited
2 CSA614O 25.000W Low Frequency PNP Plastic Leaded Transistor. 55V Vceo, 3.000A Ic, 70 - 140 hFE. Continental Device India Limited
3 CSA614R 25.000W Low Frequency PNP Plastic Leaded Transistor. 55V Vceo, 3.000A Ic, 40 - 80 hFE. Continental Device India Limited
4 CSA614Y 25.000W Low Frequency PNP Plastic Leaded Transistor. 55V Vceo, 3.000A Ic, 120 - 240 hFE. Continental Device India Limited
5 KSA614 PNP Epitaxial Silicon Transistor Fairchild Semiconductor
6 KSA614 -80 V, -3 A, PNP epitaxial silicon transistor Samsung Electronic
7 KSA614 Silicon PNP Power Transistors TO-220 package Savantic
8 KSA614O PNP Epitaxial Silicon Transistor Fairchild Semiconductor
9 KSA614OTU PNP Epitaxial Silicon Transistor Fairchild Semiconductor
10 KSA614R PNP Epitaxial Silicon Transistor Fairchild Semiconductor
11 KSA614RTU PNP Epitaxial Silicon Transistor Fairchild Semiconductor
12 KSA614Y PNP Epitaxial Silicon Transistor Fairchild Semiconductor
13 KSA614YTSTU PNP Epitaxial Silicon Transistor Fairchild Semiconductor
14 KSA614YTU PNP Epitaxial Silicon Transistor Fairchild Semiconductor
15 NX8567SA614-BC EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1561.419 nm. Frequency 192.00 THz. FC-UPC connector. NEC
16 NX8567SA614-CC EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1561.419 nm. Frequency 192.00 THz. SC-UPC connector. NEC
17 SA614A Low power FM IF system Philips
18 SA614AD Low power FM IF system NXP Semiconductors
19 SA614AD Low power FM IF system Philips
20 SA614AHR Low power FM IF system NXP Semiconductors
21 SA614AN Low power FM IF system Philips


Datasheets found :: 21 Page: | 1 |


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