Datasheets for SA614

Datasheets found :: 21 Page: | 1 |

No.	Part Name	Description	Manufacturer
1	CSA614	25.000W Low Frequency PNP Plastic Leaded Transistor. 55V Vceo, 3.000A Ic, 40 - 240 hFE.	Continental Device India Limited
2	CSA614O	25.000W Low Frequency PNP Plastic Leaded Transistor. 55V Vceo, 3.000A Ic, 70 - 140 hFE.	Continental Device India Limited
3	CSA614R	25.000W Low Frequency PNP Plastic Leaded Transistor. 55V Vceo, 3.000A Ic, 40 - 80 hFE.	Continental Device India Limited
4	CSA614Y	25.000W Low Frequency PNP Plastic Leaded Transistor. 55V Vceo, 3.000A Ic, 120 - 240 hFE.	Continental Device India Limited
5	KSA614	PNP Epitaxial Silicon Transistor	Fairchild Semiconductor
6	KSA614	-80 V, -3 A, PNP epitaxial silicon transistor	Samsung Electronic
7	KSA614	Silicon PNP Power Transistors TO-220 package	Savantic
8	KSA614O	PNP Epitaxial Silicon Transistor	Fairchild Semiconductor
9	KSA614OTU	PNP Epitaxial Silicon Transistor	Fairchild Semiconductor
10	KSA614R	PNP Epitaxial Silicon Transistor	Fairchild Semiconductor
11	KSA614RTU	PNP Epitaxial Silicon Transistor	Fairchild Semiconductor
12	KSA614Y	PNP Epitaxial Silicon Transistor	Fairchild Semiconductor
13	KSA614YTSTU	PNP Epitaxial Silicon Transistor	Fairchild Semiconductor
14	KSA614YTU	PNP Epitaxial Silicon Transistor	Fairchild Semiconductor
15	NX8567SA614-BC	EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1561.419 nm. Frequency 192.00 THz. FC-UPC connector.	NEC
16	NX8567SA614-CC	EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1561.419 nm. Frequency 192.00 THz. SC-UPC connector.	NEC
17	SA614A	Low power FM IF system	Philips
18	SA614AD	Low power FM IF system	NXP Semiconductors
19	SA614AD	Low power FM IF system	Philips
20	SA614AHR	Low power FM IF system	NXP Semiconductors
21	SA614AN	Low power FM IF system	Philips

Datasheets found :: 21 Page: | 1 |