No. |
Part Name |
Description |
Manufacturer |
1 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Serial Presence Detec |
Samsung Electronic |
2 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet |
Samsung Electronic |
3 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet |
Samsung Electronic |
4 |
16L102DA4 |
VACUUM FLUORESCENT DISPLAY MODULE |
Samsung Electronic |
5 |
16T202DA1J |
VACUUM FLUORESCENT DISPLAY MODULE |
Samsung Electronic |
6 |
1808SAMA11A |
High Voltage MLC Chip |
AVX Corporation |
7 |
1808SAMA13A |
High Voltage MLC Chip |
AVX Corporation |
8 |
1808SAMA19A |
High Voltage MLC Chip |
AVX Corporation |
9 |
1808SAMAT1A |
High Voltage MLC Chip |
AVX Corporation |
10 |
1808SAMAT3A |
High Voltage MLC Chip |
AVX Corporation |
11 |
1808SAMAT9A |
High Voltage MLC Chip |
AVX Corporation |
12 |
20S207DA4 |
VACUUM FLUORESCENT DISPLAY MODULE |
Samsung Electronic |
13 |
256MBDDRSDRAM |
DDRSDRAMSpecificationVersion0.3 |
Samsung Electronic |
14 |
2N2906 |
1.8W PNP GENERAL PURPOSE SAMLL SIGNAL TRANSISTORS |
ST Microelectronics |
15 |
2N2907 |
1.8W PNP GENERAL PURPOSE SAMLL SIGNAL TRANSISTORS |
ST Microelectronics |
16 |
2N3903 |
npn epitaxial silicon transistor |
Samsung Electronic |
17 |
2N3905 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
18 |
2N4123 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
19 |
2N4124 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
20 |
2N4125 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
21 |
2N4126 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
22 |
2N5086 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
23 |
2N5089 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
24 |
2N5210 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
25 |
2N5400 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
26 |
2N5401 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
27 |
2N5401SAM |
0.625W General Purpose PNP Plastic Leaded Transistor. 150V Vceo, 0.600A Ic, 50 - hFE |
Continental Device India Limited |
28 |
2N5550 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
29 |
2N6427 |
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR |
Samsung Electronic |
30 |
2N6428 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
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