| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SC2710 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier Applications |
TOSHIBA |
| 2 |
2SC2712 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 3 |
2SC2712-BL |
SOT-23 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 4 |
2SC2712-GR |
SOT-23 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 5 |
2SC2712-O |
SOT-23 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 6 |
2SC2712-Y |
SOT-23 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 7 |
2SC2712GT1 |
General Purpose Amplifier Transistor |
ON Semiconductor |
| 8 |
2SC2713 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 9 |
2SC2714 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications FM, RF, MIX,IF Amplifier Applications |
TOSHIBA |
| 10 |
2SC2715 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications |
TOSHIBA |
| 11 |
2SC2716 |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications |
TOSHIBA |
| 12 |
2SC2717 |
Transistor Silicon NPN Epitaxial Planar Type TV Final Picture IF Amplifier Applications |
TOSHIBA |
| 13 |
CSA1162GR |
0.150W Low Frequency PNP SMD Transistor. 50V Vceo, 0.150A Ic, 200 - 400 hFE. Complementary CSC2712 |
Continental Device India Limited |
| 14 |
CSA1162Y |
0.150W Low Frequency PNP SMD Transistor. 50V Vceo, 0.150A Ic, 120 - 240 hFE. Complementary CSC2712 |
Continental Device India Limited |
| 15 |
CSA1163 |
0.150W General Purpose PNP SMD Transistor. 120V Vceo, 0.100A Ic, 200 - 700 hFE. Complementary CSC2713 |
Continental Device India Limited |
| 16 |
CSA1163G |
0.150W General Purpose PNP SMD Transistor. 120V Vceo, 0.100A Ic, 200 - 400 hFE. Complementary CSC2713G |
Continental Device India Limited |
| 17 |
CSA1163L |
0.150W General Purpose PNP SMD Transistor. 120V Vceo, 0.100A Ic, 350 - 700 hFE. Complementary CSC2713L |
Continental Device India Limited |
| 18 |
CSC2712BL |
0.150W Low Frequency NPN SMD Transistor. 50V Vceo, 0.150A Ic, 350 - 700 hFE. Complementary CSA1162 |
Continental Device India Limited |
| 19 |
CSC2712GR |
0.150W Low Frequency NPN SMD Transistor. 50V Vceo, 0.150A Ic, 200 - 400 hFE. Complementary CSA1162 |
Continental Device India Limited |
| 20 |
CSC2712Y |
0.150W Low Frequency NPN SMD Transistor. 50V Vceo, 0.150A Ic, 120 - 240 hFE. Complementary CSA1162 |
Continental Device India Limited |
| 21 |
CSC2713 |
0.150W Low Frequency NPN SMD Transistor. 120V Vceo, 0.100A Ic, 200 - 700 hFE. Complementary csa1163 |
Continental Device India Limited |
| 22 |
CSC2713G |
0.150W Low Frequency NPN SMD Transistor. 120V Vceo, 0.100A Ic, 200 - 400 hFE. |
Continental Device India Limited |
| 23 |
CSC2713L |
0.150W Low Frequency NPN SMD Transistor. 120V Vceo, 0.100A Ic, 350 - 700 hFE. |
Continental Device India Limited |
| 24 |
KSC2710 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 25 |
KSC2710 |
NPN (LOW FREQUENCY POWER AMPLIFIER) |
Samsung Electronic |
| 26 |
KSC2710GBU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 27 |
KSC2710GTA |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 28 |
KSC2710YBU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 29 |
KSC2710YTA |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 30 |
KSC2715 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| | | |
