| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SD1126 |
Silicon NPN Triple Diffused |
Hitachi Semiconductor |
| 2 |
2SD1126 |
Transistors>Switching/Bipolar |
Renesas |
| 3 |
2SD1126(K) |
Silicon NPN Darlington Transistor |
Hitachi Semiconductor |
| 4 |
2SD1126K |
Silicon NPN Triple Diffused |
Hitachi Semiconductor |
| 5 |
2SD1127 |
SILICON NPN TRIPLE DIFFUSED POWER SWITCHING |
Hitachi Semiconductor |
| 6 |
2SD1128 |
NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS) |
Wing Shing Computer Components |
| 7 |
PSD112_08 |
800 V three phase rectifier bridge |
POWERSEM |
| 8 |
PSD112_12 |
1200 V three phase rectifier bridge |
POWERSEM |
| 9 |
PSD112_14 |
1400 V three phase rectifier bridge |
POWERSEM |
| 10 |
PSD112_16 |
1600 V three phase rectifier bridge |
POWERSEM |
| 11 |
PSD112_18 |
1800 V three phase rectifier bridge |
POWERSEM |
| 12 |
SD1122BD |
200 V, 10 ohm, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 13 |
SD1122CHP |
200 V, 10 ohm, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 14 |
SD1127 |
RF NPN Transistor |
Microsemi |
| 15 |
SD1127 |
Trans GP BJT NPN 18V 0.64A 3-Pin TO-39 |
New Jersey Semiconductor |
| 16 |
SD1127BD |
60 V, 4 ohm, N-channel enhancement-mode vertical D-MOS FET ultra low-leakage |
Topaz Semiconductor |
| 17 |
SD1127CHP |
60 V, 4 ohm, N-channel enhancement-mode vertical D-MOS FET ultra low-leakage |
Topaz Semiconductor |
| | | |
