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Datasheets for SD667

Datasheets found :: 23
Page: | 1 |
No. Part Name Description Manufacturer
1 2SD667 Silicon NPN Transistor Hitachi Semiconductor
2 2SD667 Silicon NPN Epitaxial Hitachi Semiconductor
3 2SD667 Transistors>Amplifiers/Bipolar Renesas
4 2SD667-B TO-92MOD Plastic-Encapsulate Biploar Transistors Micro Commercial Components
5 2SD667-C TO-92MOD Plastic-Encapsulate Biploar Transistors Micro Commercial Components
6 2SD667-D TO-92MOD Plastic-Encapsulate Biploar Transistors Micro Commercial Components
7 2SD667A Silicon NPN Transistor Hitachi Semiconductor
8 2SD667A Silicon NPN Epitaxial Hitachi Semiconductor
9 2SD667A Transistors>Amplifiers/Bipolar Renesas
10 2SD667A-B TO-92MOD Plastic-Encapsulate Biploar Transistors Micro Commercial Components
11 2SD667A-C TO-92MOD Plastic-Encapsulate Biploar Transistors Micro Commercial Components
12 2SD667A-D TO-92MOD Plastic-Encapsulate Biploar Transistors Micro Commercial Components
13 2SD667L-B TO-92L Plastic-Encapsulate Biploar Transistors Micro Commercial Components
14 2SD667L-C TO-92L Plastic-Encapsulate Biploar Transistors Micro Commercial Components
15 2SD667L-D TO-92L Plastic-Encapsulate Biploar Transistors Micro Commercial Components
16 CSD667 0.900W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 60 - 320 hFE Continental Device India Limited
17 CSD667A 0.900W General Purpose NPN Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 60 - 200 hFE Continental Device India Limited
18 CSD667AB 0.900W General Purpose NPN Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 60 - 120 hFE Continental Device India Limited
19 CSD667AC 0.900W General Purpose NPN Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 100 - 200 hFE Continental Device India Limited
20 CSD667B 0.900W General Purpose NPN Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 60 - 120 hFE Continental Device India Limited
21 CSD667C 0.900W General Purpose NPN Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 100 - 200 hFE Continental Device India Limited
22 CSD667D 0.900W General Purpose NPN Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 160 - 320 hFE Continental Device India Limited
23 HSD667A SILICON NPN EPITAXIAL Hi-Sincerity Microelectronics


Datasheets found :: 23
Page: | 1 |



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