| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SD882 |
NPN(for the output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver) |
NEC |
| 2 |
2SD882 |
Silicon NPN Power Transistors TO-126 package |
Savantic |
| 3 |
2SD882 |
NPN medium power transistor |
ST Microelectronics |
| 4 |
2SD882 |
NPN medium power low vow voltage transistor |
Unisonic Technologies |
| 5 |
2SD882-GR |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 6 |
2SD882-O |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 7 |
2SD882-R |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 8 |
2SD882-Y |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 9 |
2SD882S |
NPN EPITAXIAL SILICON TRANSISTOR |
Unisonic Technologies |
| 10 |
CSB772 |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882 |
Continental Device India Limited |
| 11 |
CSB772E |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E |
Continental Device India Limited |
| 12 |
CSB772P |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P |
Continental Device India Limited |
| 13 |
CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q |
Continental Device India Limited |
| 14 |
CSB772R |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R |
Continental Device India Limited |
| 15 |
CSD882 |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772 |
Continental Device India Limited |
| 16 |
CSD882E |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E |
Continental Device India Limited |
| 17 |
CSD882P |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P |
Continental Device India Limited |
| 18 |
CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q |
Continental Device India Limited |
| 19 |
CSD882R |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R |
Continental Device India Limited |
| 20 |
HSD882 |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
| 21 |
HSD882S |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
| 22 |
KSD882 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 23 |
KSD882 |
NPN (AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING) |
Samsung Electronic |
| 24 |
KSD882OS |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 25 |
KSD882RS |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 26 |
KSD882YS |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 27 |
KSD882YSTSSTU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 28 |
KSD882YSTSTU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 29 |
KSD882YSTU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 30 |
KSD882YSTU_NL |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| | | |
