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Datasheets for SI-

Datasheets found :: 4080
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 1N4148 Small Signal Si-Diodes Diotec Elektronische
2 1N4150 Small Signal Si-Diodes Diotec Elektronische
3 1N4151 Small Signal Si-Diodes Diotec Elektronische
4 1N4448 Small Signal Si-Diodes Diotec Elektronische
5 1N5817 Si-Schottky-Rectifiers Diotec Elektronische
6 1N5818 Si-Schottky-Rectifiers Diotec Elektronische
7 1N5819 Si-Schottky-Rectifiers Diotec Elektronische
8 1N5820 Si-Schottky-Rectifiers Diotec Elektronische
9 1N5821 Si-Schottky-Rectifiers Diotec Elektronische
10 1N5822 Si-Schottky-Rectifiers Diotec Elektronische
11 28C256ASI-1 High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
12 28C256ASI-1 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. Turbo IC
13 28C256ASI-2 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. Turbo IC
14 28C256ASI-2 High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
15 28C256ASI-3 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Turbo IC
16 28C256ASI-3 High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
17 28C256ASI-4 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Turbo IC
18 28C256ASI-4 High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
19 28LV256SI-3 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Turbo IC
20 28LV256SI-3 Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
21 28LV256SI-4 Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
22 28LV256SI-4 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Turbo IC
23 28LV256SI-5 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. Turbo IC
24 28LV256SI-5 Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
25 28LV256SI-6 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Turbo IC
26 28LV256SI-6 Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
27 2N3903 Si-Epitaxial PlanarTransistors Diotec Elektronische
28 2N3904 Si-Epitaxial PlanarTransistors Diotec Elektronische
29 2N3905 Si-Epitaxial PlanarTransistors Diotec Elektronische
30 2N3906 Si-Epitaxial PlanarTransistors Diotec Elektronische


Datasheets found :: 4080
Page: | 1 | 2 | 3 | 4 | 5 |



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