| No. |
Part Name |
Description |
Manufacturer |
| 1 |
12FXF11 |
Silicon alloy-diffused junction avalanche rectifier 3000V 3.8kW 12A |
TOSHIBA |
| 2 |
12LF11 |
Silicon alloy-diffused junction avalanche rectifier 800V 12A 3.8kW |
TOSHIBA |
| 3 |
12NF11 |
Silicon alloy-diffused junction avalanche rectifier 1000V 12A 3.8kW |
TOSHIBA |
| 4 |
12QF11 |
Silicon alloy-diffused junction avalanche rectifier 1200V 12A 3.8kW |
TOSHIBA |
| 5 |
150LD11 |
Silicon alloy-diffused junction rectifier 800V 150A |
TOSHIBA |
| 6 |
150ND11 |
Silicon alloy-diffused junction rectifier 1000V 150A |
TOSHIBA |
| 7 |
150QD11 |
Silicon alloy-diffused junction rectifier 1200V 150A |
TOSHIBA |
| 8 |
150TD11 |
Silicon alloy-diffused junction rectifier 1500V 150A |
TOSHIBA |
| 9 |
150UC11 |
Silicon alloy-diffused junction rectifier 1600V 150A |
TOSHIBA |
| 10 |
1600EXD22 |
Silicon alloy-diffused junction rectifier 2500V 1600A |
TOSHIBA |
| 11 |
1600FD21 |
Silicon alloy-diffused junction rectifier 300V 1600A |
TOSHIBA |
| 12 |
1600FXD22 |
Silicon alloy-diffused junction rectifier 3000V 1600A |
TOSHIBA |
| 13 |
1LE11 |
Silicon alloy-diffused junction avalanche rectifier 1A 800V |
TOSHIBA |
| 14 |
1NE11 |
Silicon alloy-diffused junction avalanche rectifier 1A 1000V |
TOSHIBA |
| 15 |
1QE11 |
Silicon alloy-diffused junction avalanche rectifier 1A 1200V |
TOSHIBA |
| 16 |
1S144 |
Silicon Alloy junction meter protection diode |
TOSHIBA |
| 17 |
1S752H |
Silicon Alloyed Junction, Zener Diode Vz=2.0...3.2 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 18 |
1S753H |
Silicon Alloyed Junction, Zener Diode Vz=3.0...3.9 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 19 |
1S754H |
Silicon Alloyed Junction, Zener Diode Vz=3.7...4.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 20 |
1S755H |
Silicon Alloyed Junction, Zener Diode Vz=4.3...5.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 21 |
250UC11 |
Silicon alloy-diffused junction high-current rectifier 1600V 250A |
TOSHIBA |
| 22 |
25FXF11 |
Silicon Alloy-Diffused junction avalanche rectifier 25A 3000V 8kW |
TOSHIBA |
| 23 |
25LF11 |
Silicon Alloy-Diffused junction avalanche rectifier 25A 800V 12kW |
TOSHIBA |
| 24 |
25NF11 |
Silicon Alloy-Diffused junction avalanche rectifier 25A 1000V 12kW |
TOSHIBA |
| 25 |
25QF11 |
Silicon Alloy-Diffused junction avalanche rectifier 25A 1200V 12kW |
TOSHIBA |
| 26 |
2N1131 |
PNP silicon annular transistor for medium-current switching applications |
Motorola |
| 27 |
2N1420 |
NPN silicon annular Star transistor for medium current switching and amplifier applications |
Motorola |
| 28 |
2N1613 |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
| 29 |
2N1711 |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
| 30 |
2N1893 |
NPN silicon annular transistor designed for medium-power applications |
Motorola |
| | | |
