| No. |
Part Name |
Description |
Manufacturer |
| 1 |
CY62136VSL-55ZSI |
2-Mbit (128K x 16) Static RAM |
Cypress |
| 2 |
CY62137VSL-55ZI |
2-Mbit (128K x 16) Static RAM |
Cypress |
| 3 |
CY62148ESL-55ZAXA |
4-Mbit (512 K � 8) Static RAM |
Cypress |
| 4 |
CY62148ESL-55ZAXAT |
4-Mbit (512 K � 8) Static RAM |
Cypress |
| 5 |
CY62148ESL-55ZAXI |
4-Mbit (512 K � 8) Static RAM |
Cypress |
| 6 |
CY62148ESL-55ZAXIT |
4-Mbit (512 K � 8) Static RAM |
Cypress |
| 7 |
CY62177ESL-55ZXI |
32-Mbit (2 M � 16/4 M � 8) Static RAM |
Cypress |
| 8 |
CY62177ESL-55ZXIT |
32-Mbit (2 M � 16/4 M � 8) Static RAM |
Cypress |
| 9 |
GLT6100L08SL-55ST |
55ns; Ultra low power 128k x 8 CMOS SRAM |
G-LINK Technology |
| 10 |
GLT6100L08SL-55TC |
55ns; Ultra low power 64K x 16 CMOS SRAM |
G-LINK Technology |
| 11 |
GLT6100L08SL-55TS |
55ns; Ultra low power 128k x 8 CMOS SRAM |
G-LINK Technology |
| 12 |
GLT6200L08SL-55FG |
55ns; Ultra low power 256K x 8 CMOS SRAM |
G-LINK Technology |
| 13 |
GLT6200L08SL-55ST |
55ns; Ultra low power 256K x 8 CMOS SRAM |
G-LINK Technology |
| 14 |
GLT6200L16SL-55FG |
55ns; Ultra low power 128K x 16 CMOS SRAM |
G-LINK Technology |
| 15 |
GLT6200L16SL-55TC |
55ns; Ultra low power 128K x 16 CMOS SRAM |
G-LINK Technology |
| 16 |
IC41C44002ASL-50J |
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
Integrated Circuit Solution Inc |
| 17 |
IC41C44002ASL-50T |
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
Integrated Circuit Solution Inc |
| 18 |
IC41LV44002ASL-50J |
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
Integrated Circuit Solution Inc |
| 19 |
IC41LV44002ASL-50T |
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
Integrated Circuit Solution Inc |
| 20 |
KM416V4004BSL-5 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power |
Samsung Electronic |
| 21 |
KM416V4104BSL-5 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power |
Samsung Electronic |
| 22 |
KM44C4000CSL-5 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 23 |
KM44C4003CSL-5 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 24 |
KM44C4005CSL-5 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns |
Samsung Electronic |
| 25 |
KM44C4100CSL-5 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 26 |
KM44C4103CSL-5 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 27 |
KM44C4104ASL-5 |
50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
| 28 |
KM44C4105CSL-5 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns |
Samsung Electronic |
| 29 |
KM44V4000CSL-5 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 30 |
KM44V4100CSL-5 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
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