No. |
Part Name |
Description |
Manufacturer |
1 |
KSR2101 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
2 |
KSR2101 |
PNP (SWITCHING APPLICATION) |
Samsung Electronic |
3 |
KSR2103 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
4 |
KSR2103 |
PNP (SWITCHING APPLICATION) |
Samsung Electronic |
5 |
KSR2103MTF |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
6 |
KSR2104 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
7 |
KSR2104 |
PNP (SWITCHING APPLICATION) |
Samsung Electronic |
8 |
KSR2104MTF |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
9 |
KSR2105 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
10 |
KSR2105 |
PNP (SWITCHING APPLICATION) |
Samsung Electronic |
11 |
KSR2106 |
PNP (SWITCHING APPLICATION) |
Samsung Electronic |
12 |
KSR2107 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
13 |
KSR2107 |
PNP (SWITCHING APPLICATION) |
Samsung Electronic |
14 |
KSR2108 |
PNP (SWITCHING APPLICATION) |
Samsung Electronic |
15 |
KSR2109 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
16 |
KSR2109 |
PNP (SWITCHING APPLICATION) |
Samsung Electronic |
17 |
SR210 |
SCHOTTKY BARRIER RECTIFIERS(2.0A,70-100V) |
MOSPEC Semiconductor |
18 |
SR210 |
Rectifier: Schottky |
Taiwan Semiconductor |
19 |
SR210-G |
Schottky Barrier Rectifiers Diodes, VRRM=100V, VR=100V, IO=2A |
Comchip Technology |
20 |
SR2100 |
2.0 AMP SCHOTTKY BARRIER RECTIFIERS |
Bytes |
21 |
SR2100 |
TECHNICAL SPECIFICATIONS OF SCHOTTKY BARRIER RECTIFIER |
DC Components |
22 |
SR2100 |
2.0 AMP SCHOTTKY BARRIER RECTIFIERS |
Formosa MS |
23 |
SR2100 |
SCHOTTKY BARRIER RECTIFIERS(2.0A,70-100V) |
MOSPEC Semiconductor |
24 |
SR2100 |
Schottky Diode |
Rectron Semiconductor |
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