| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N988 |
0.5W, silicon zener diode. Zener voltage 130V. Test current 0.95mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 2 |
1N988A |
0.5W, silicon zener diode. Zener voltage 130V. Test current 0.95mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 3 |
1N989 |
0.5W, silicon zener diode. Zener voltage 150V. Test current 0.85mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 4 |
1N989A |
0.5W, silicon zener diode. Zener voltage 150V. Test current 0.85mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 5 |
1N990 |
0.5W, silicon zener diode. Zener voltage 160V. Test current 0.80mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 6 |
1N990A |
0.5W, silicon zener diode. Zener voltage 160V. Test current 0.80mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 7 |
1N991 |
0.5W, silicon zener diode. Zener voltage 180V. Test current 0.68mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 8 |
1N991A |
0.5W, silicon zener diode. Zener voltage 180V. Test current 0.68mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 9 |
1N992 |
0.5W, silicon zener diode. Zener voltage 200V. Test current 0.65mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 10 |
1N992A |
0.5W, silicon zener diode. Zener voltage 200V. Test current 0.65mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 11 |
2N7227 |
POWER MOS IV JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS 400 Volt 0.315 Ohm |
Advanced Power Technology |
| 12 |
2N7228 |
POWER MOS IV JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS 500 Volt 0.415 Ohm |
Advanced Power Technology |
| 13 |
2N918 |
hfe min 20 ft typ 600 MHz Transistor polarity NPN Current Ic continuous max 0.05 A Voltage Vcbo 30 V Voltage Vceo 15 V Current Ic (hfe) 3 mA Power Ptot 0.2 W |
SGS Thomson Microelectronics |
| 14 |
5B45 |
Isolated Frequency Input 0 to 10 kHz Input Signal Conditioning Module |
Analog Devices |
| 15 |
5B45-01 |
Isolated Frequency Input 0 to 10 kHz Input Signal Conditioning Module |
Analog Devices |
| 16 |
5B45-02 |
Isolated Frequency Input 0 to 10 kHz Input Signal Conditioning Module |
Analog Devices |
| 17 |
5B45-03 |
Isolated Frequency Input 0 to 10 kHz Input Signal Conditioning Module |
Analog Devices |
| 18 |
5B45-04 |
Isolated Frequency Input 0 to 10 kHz Input Signal Conditioning Module |
Analog Devices |
| 19 |
5B45-05 |
Isolated Frequency Input 0 to 10 kHz Input Signal Conditioning Module |
Analog Devices |
| 20 |
5B46 |
Isolated Frequency Input 0 to 250 kHz Input Signal Conditioning Module |
Analog Devices |
| 21 |
5B46-01 |
Isolated Frequency Input 0 to 250 kHz Input Signal Conditioning Module |
Analog Devices |
| 22 |
5B46-02 |
Isolated Frequency Input 0 to 250 kHz Input Signal Conditioning Module |
Analog Devices |
| 23 |
5B46-03 |
Isolated Frequency Input 0 to 250 kHz Input Signal Conditioning Module |
Analog Devices |
| 24 |
5B46-04 |
Isolated Frequency Input 0 to 250 kHz Input Signal Conditioning Module |
Analog Devices |
| 25 |
AQZ104 |
Power photoMOS relay, 1-channel (form A). DC type. Output rating: load voltage 400 V, load current 0.7 A. |
Matsushita Electric Works(Nais) |
| 26 |
AQZ104D |
Power photoMOS relay (voltage sensitive type). DC type. Output rating: load voltage 400 V, load current 0.6 A. |
Matsushita Electric Works(Nais) |
| 27 |
AQZ204 |
Power photoMOS relay, 1-channel (form A). AC/DC type. Output rating: load voltage 400 V, load current 0.5 A. |
Matsushita Electric Works(Nais) |
| 28 |
AQZ204D |
Power photoMOS relay (voltage sensitive type). AC/DC type. Output rating: load voltage 400 V, load current 0.45 A. |
Matsushita Electric Works(Nais) |
| 29 |
AQZ204V |
Power photoMOS relay with internal varistor. AC/DC type. Output rating: load voltage 140 V AC, 180 V DC, load current 0.5 A. |
Matsushita Electric Works(Nais) |
| 30 |
AQZ207D |
Power photoMOS relay (voltage sensitive type). AC/DC type. Output rating: load voltage 200 V, load current 0.9 A. |
Matsushita Electric Works(Nais) |
| | | |
