| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1313 |
Metallized Polyester |
Electronic Film Capacitors |
| 2 |
13PD100-S |
The 13PD100-S, an InGaAs photodiode with a 100µm-diameter photosensitive region and mounted on a metallized ceramic substrate, ... |
Anadigics Inc |
| 3 |
13PD150-S |
The 13PD150-S, an InGaAs photodiode with a 150µm-diameter photosensitive region and mounted on a metallized ceramic substrate, ... |
Anadigics Inc |
| 4 |
30CLJQ045SCS |
30A 45V Hi-Rel Schottky Common Cathode Diode in a Metallic Lid SMD-0.5 package DLA Number 1N7064CCU3 |
International Rectifier |
| 5 |
BFP90A |
NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion |
Philips |
| 6 |
BFP91A |
NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion |
Philips |
| 7 |
BFP96 |
NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion |
Philips |
| 8 |
BFQ23C |
Silicon planar epitaxial gold-metallized PNP transistor in a sub-miniature HERMETICALLY SEALED micro-stripline envelope |
Philips |
| 9 |
BFQ32C |
Gold-metallized PNP silicon RF transistor |
Philips |
| 10 |
BFQ51C |
Gold-metallized PNP silicon transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFP90A |
Philips |
| 11 |
BFR91A |
NPN silicon planar epitaxial transistor for use in UHF and microwave amplifiers, low noise, high power gain, gold metallization |
Philips |
| 12 |
CFY25 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 13 |
CFY25-17 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 14 |
CFY25-20 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 15 |
CFY25-23 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 16 |
CGY31 |
GaAs MMIC (Two-stage monolithic microwave IC MMIC amplifier All-gold metallization Chip fully passivated) |
Siemens |
| 17 |
CGY52 |
GaAs MMIC (Two stages monolithic microwave IC MMICAmplifier All gold metallisation) |
Siemens |
| 18 |
CH1021 |
Metallized paper capacitor |
IPRS Baneasa |
| 19 |
D1001UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 175MHz SINGLE ENDED |
SemeLAB |
| 20 |
D1014 |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET |
etc |
| 21 |
D1024UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W - 28V - 500MHz PUSH?PULL |
SemeLAB |
| 22 |
D1025UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W - 28V - 175MHz SINGLE ENDED |
SemeLAB |
| 23 |
D1221UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W - 12.5V - 175MHz SINGLE ENDED |
SemeLAB |
| 24 |
D1222UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W - 12.5V - 175MHz PUSH-PULL |
SemeLAB |
| 25 |
D2204UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 12.5V - 900MHz SINGLE ENDED |
SemeLAB |
| 26 |
D2205UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W - 12.5V - 1GHz SINGLE ENDED |
SemeLAB |
| 27 |
D2208UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W - 12.5V - 500MHz PUSH-PULL |
SemeLAB |
| 28 |
D2290UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1W - 12.5V - 1GHz SINGLE ENDED |
SemeLAB |
| 29 |
D5K1 |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W - 50V - 175MHZ PUSH-PULL |
New Jersey Semiconductor |
| 30 |
D5K2 |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W - 50V - 175MHZ PUSH-PULL |
New Jersey Semiconductor |
| | | |
