| No. |
Part Name |
Description |
Manufacturer |
| 1 |
MTD6N10 |
POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATE, DPAK FOR SURFACE MOUNT OR INSERTION MOUNT |
Motorola |
| 2 |
MTD6N10E |
TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM |
Motorola |
| 3 |
MTD6N10E |
6 Amp DPAK Surface Mount Products, N-Channel, VDSS 100 |
ON Semiconductor |
| 4 |
MTD6N10E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 5 |
MTD6N15 |
TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHM |
Motorola |
| 6 |
MTD6N15 |
TMOS Power 150V .3R |
ON Semiconductor |
| 7 |
MTD6N15-D |
Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 8 |
MTD6N15T4 |
TMOS Power 150V .3R |
ON Semiconductor |
| 9 |
MTD6N15T4G |
TMOS Power 150V .3R |
ON Semiconductor |
| 10 |
STD6N10 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 11 |
STD6N10 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 12 |
STD6N10 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| | | |
