| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BTP128 |
Tyrystor |
Ultra CEMI |
| 2 |
BTP129 |
Tyrystor |
Ultra CEMI |
| 3 |
ELLATP120MB |
Power Inductors for Consumer - Magnetic shielded Ferrite core type(10mm) |
Panasonic |
| 4 |
ELLATP121MB |
Power Inductors for Consumer - Magnetic shielded Ferrite core type(10mm) |
Panasonic |
| 5 |
HGTP12N60A4 |
600V, SMPS Series N-Channel IGBTs |
Fairchild Semiconductor |
| 6 |
HGTP12N60A4 |
600V/ SMPS Series N-Channel IGBT |
Intersil |
| 7 |
HGTP12N60A4D |
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
Fairchild Semiconductor |
| 8 |
HGTP12N60A4D |
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
Intersil |
| 9 |
HGTP12N60A4D_NL |
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
Fairchild Semiconductor |
| 10 |
HGTP12N60B3 |
27A, 600V, UFS Series N-Channel IGBTs |
Fairchild Semiconductor |
| 11 |
HGTP12N60B3 |
27A/ 600V/ UFS Series N-Channel IGBTs |
Intersil |
| 12 |
HGTP12N60B3D |
27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode |
Fairchild Semiconductor |
| 13 |
HGTP12N60B3D |
27A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode |
Intersil |
| 14 |
HGTP12N60C3 |
24A, 600V, UFS Series N-Channel IGBTs |
Fairchild Semiconductor |
| 15 |
HGTP12N60C3 |
24A/ 600V/ UFS Series N-Channel IGBTs |
Intersil |
| 16 |
HGTP12N60C3D |
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
Fairchild Semiconductor |
| 17 |
HGTP12N60C3D |
24A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
Intersil |
| 18 |
HGTP12N60D1 |
12A/ 600V N-Channel IGBT |
Intersil |
| 19 |
MAX6505UTP120+ |
Dual Trip SOT Temperature Switches |
MAXIM - Dallas Semiconductor |
| 20 |
MAX6505UTP120-T |
Trip point 120, 30 mA, dual trip SOT temperature switch |
MAXIM - Dallas Semiconductor |
| 21 |
MAX6505UTP125+ |
Dual Trip SOT Temperature Switches |
MAXIM - Dallas Semiconductor |
| 22 |
MAX6505UTP125-T |
Trip point 125, 30 mA, dual trip SOT temperature switch |
MAXIM - Dallas Semiconductor |
| 23 |
MAX6506UTP120-T |
Trip point 120, 30 mA, dual trip SOT temperature switch |
MAXIM - Dallas Semiconductor |
| 24 |
MAX6506UTP125-T |
Trip point 125, 30 mA, dual trip SOT temperature switch |
MAXIM - Dallas Semiconductor |
| 25 |
MTP12N05E |
POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 26 |
MTP12N06 |
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM |
Motorola |
| 27 |
MTP12N06EZL |
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM |
Motorola |
| 28 |
MTP12N06EZL |
OBSOLETE - N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 29 |
MTP12N06EZL-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 30 |
MTP12N08L |
Trans MOSFET N-CH 60V 12A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
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