| No. |
Part Name |
Description |
Manufacturer |
| 1 |
ATP602 |
N-Channel Power MOSFET, 600V, 5A, 2.7Ohm, ATPAK |
ON Semiconductor |
| 2 |
ELL8TP680MB |
Power Inductors for Consumer - Magnetic shielded Ferrite core type(8mm) |
Panasonic |
| 3 |
ELL8TP681MB |
Power Inductors for Consumer - Magnetic shielded Ferrite core type(8mm) |
Panasonic |
| 4 |
ELL8TP6R8NB |
Power Inductors for Consumer - Magnetic shielded Ferrite core type(8mm) |
Panasonic |
| 5 |
ELLATP680MB |
Power Inductors for Consumer - Magnetic shielded Ferrite core type(10mm) |
Panasonic |
| 6 |
ELLATP681MB |
Power Inductors for Consumer - Magnetic shielded Ferrite core type(10mm) |
Panasonic |
| 7 |
ELLATP6R8NB |
Power Inductors for Consumer - Magnetic shielded Ferrite core type(10mm) |
Panasonic |
| 8 |
ELLCTP680MB |
Power Inductors for Consumer - Magnetic shielded Ferrite core type(12mm) |
Panasonic |
| 9 |
ELLCTP681MB |
Power Inductors for Consumer - Magnetic shielded Ferrite core type(12mm) |
Panasonic |
| 10 |
ELLCTP6R8NB |
Power Inductors for Consumer - Magnetic shielded Ferrite core type(12mm) |
Panasonic |
| 11 |
IRAMX30TP60A |
30A, 600V Integrated Power Hybrid IC with Open Omitter Pin for Advanced Appliance Motor Drive applications. |
International Rectifier |
| 12 |
IRAMX30TP60A-2 |
30A, 600V Integrated Power Hybrid IC with Open Omitter Pin for Advanced Appliance Motor Drive applications. |
International Rectifier |
| 13 |
IXTP62N15P |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
| 14 |
K4S643232E-TP60 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
| 15 |
K4S643232F-TP60 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V |
Samsung Electronic |
| 16 |
MAX6507UTP64-T |
Trip temperature 100, 30 mA, dual trip SOT temperature switch |
MAXIM - Dallas Semiconductor |
| 17 |
MAX6507UTP69-T |
Trip temperature 105, 30 mA, dual trip SOT temperature switch |
MAXIM - Dallas Semiconductor |
| 18 |
MAX6507UTP6E-T |
Trip temperature 110, 30 mA, dual trip SOT temperature switch |
MAXIM - Dallas Semiconductor |
| 19 |
MAX6508UTP64-T |
Trip temperature 100, 30 mA, dual trip SOT temperature switch |
MAXIM - Dallas Semiconductor |
| 20 |
MAX6508UTP69-T |
Trip temperature 105, 30 mA, dual trip SOT temperature switch |
MAXIM - Dallas Semiconductor |
| 21 |
MAX6508UTP6E-T |
Trip temperature 110, 30 mA, dual trip SOT temperature switch |
MAXIM - Dallas Semiconductor |
| 22 |
MTP60N05 |
TMOS POWER FET 60 AMPERES 50 VOLTS RDS(on) = 0.014 OHM |
Motorola |
| 23 |
MTP60N05HDL |
TMOS POWER FET 60 AMPERES 50 VOLTS RDS(on) = 0.014 OHM |
Motorola |
| 24 |
MTP60N06 |
TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM |
Motorola |
| 25 |
MTP60N06HD |
TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM |
Motorola |
| 26 |
MTP60N06HD |
Power MOSFET 60 Amps, 60 Volts |
ON Semiconductor |
| 27 |
MTP60N06HD-D |
Power MOSFET 60 Amps, 60 Volts N-Channel TO-220 |
ON Semiconductor |
| 28 |
MTP6N10 |
POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 29 |
MTP6N60 |
Trans MOSFET N-CH 600V 6.8A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 30 |
MTP6N60 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| | | |
