No. |
Part Name |
Description |
Manufacturer |
1 |
ELLATP820MB |
Power Inductors for Consumer - Magnetic shielded Ferrite core type(10mm) |
Panasonic |
2 |
ELLATP8R2NB |
Power Inductors for Consumer - Magnetic shielded Ferrite core type(10mm) |
Panasonic |
3 |
K6R4016C1D-TP8 |
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
4 |
MAX6507UTP82-T |
Trip temperature -40, 30 mA, dual trip SOT temperature switch |
MAXIM - Dallas Semiconductor |
5 |
MAX6507UTP87-T |
Trip temperature -35, 30 mA, dual trip SOT temperature switch |
MAXIM - Dallas Semiconductor |
6 |
MAX6507UTP8C-T |
Trip temperature -30, 30 mA, dual trip SOT temperature switch |
MAXIM - Dallas Semiconductor |
7 |
MAX6508UTP82-T |
Trip temperature -40, 30 mA, dual trip SOT temperature switch |
MAXIM - Dallas Semiconductor |
8 |
MAX6508UTP87-T |
Trip temperature -35, 30 mA, dual trip SOT temperature switch |
MAXIM - Dallas Semiconductor |
9 |
MAX6508UTP8C-T |
Trip temperature -30, 30 mA, dual trip SOT temperature switch |
MAXIM - Dallas Semiconductor |
10 |
MTP805N |
8051 embedded USB/PS2 keyboard/mouse controller |
MYSON TECHNOLOGY |
11 |
MTP805S |
8051 embedded USB/PS2 keyboard/mouse controller |
MYSON TECHNOLOGY |
12 |
MTP805V |
8051 embedded USB/PS2 keyboard/mouse controller |
MYSON TECHNOLOGY |
13 |
MTP8N06 |
TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM |
Motorola |
14 |
MTP8N06E |
TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM |
Motorola |
15 |
MTP8N20 |
Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
16 |
MTP8N50E |
TMOS POWER FET 8.0 AMPERES 500 VOLTS RDS(on) = 0.8 OHM |
Motorola |
17 |
MTP8N50E |
Power Field Effect Transistor |
ON Semiconductor |
18 |
MTP8N50E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
19 |
MTP8N60 |
Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
20 |
MTP8P08 |
POWER FIELD EFFECT TRANSISTOR |
Motorola |
21 |
MTP8P10 |
POWER FIELD EFFECT TRANSISTOR |
Motorola |
22 |
NTP85N03 |
Power MOSFET 85 Amps, 28 Volts |
ON Semiconductor |
23 |
NTP85N03-D |
Power MOSFET 85 Amps, 28 Volts N-Channel TO-220 and D2PAK |
ON Semiconductor |
24 |
NTP8N50-D |
Power MOSFET 8 Amps, 500 Volts N-Channel TO-220 and D2PAK |
ON Semiconductor |
25 |
STP80N03L-06 |
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
26 |
STP80N05-09 |
N - CHANNEL ENHANCEMENT MODE �ULTRA HIGH DENSITY� POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
27 |
STP80N0509 |
TRANSISTOR MOSFET TO-220 |
SGS Thomson Microelectronics |
28 |
STP80N06-10 |
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
29 |
STP80N10F7 |
N-channel 100 V, 0.0085 Ohm typ., 80 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in TO-220 package |
ST Microelectronics |
30 |
STP80N20M5 |
N-channel 200 V, 0.019 Ohm typ., 61 A MDmesh(TM) V Power MOSFET in TO-220 Package |
ST Microelectronics |
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