No. |
Part Name |
Description |
Manufacturer |
1 |
1000307PC |
Low Power Quint Exclusive OR/NOR Gate |
Fairchild Semiconductor |
2 |
1000307QC |
Low Power Quint Exclusive OR/NOR Gate |
Fairchild Semiconductor |
3 |
1000307QI |
Low Power Quint Exclusive OR/NOR Gate |
Fairchild Semiconductor |
4 |
100307 |
Low Power Quint Exclusive OR/NOR Gate |
Fairchild Semiconductor |
5 |
100307 |
Low Power Quint Exclusive OR/NOR Gate |
National Semiconductor |
6 |
100307D |
Low Power Quint Exclusive OR/NOR Gate |
National Semiconductor |
7 |
100307DC |
Low Power Quint Exclusive OR/NOR Gate |
Fairchild Semiconductor |
8 |
100307F |
Low Power Quint Exclusive OR/NOR Gate |
National Semiconductor |
9 |
100307MW8 |
Low Power Quint Exclusive OR/NOR Gate |
National Semiconductor |
10 |
100307PC |
Low Power Quint Exclusive OR/NOR Gate |
Fairchild Semiconductor |
11 |
100307QC |
Low Power Quint Exclusive OR/NOR Gate |
Fairchild Semiconductor |
12 |
100307QCX |
Low Power Quint Exclusive OR/NOR Gate |
Fairchild Semiconductor |
13 |
100307QI |
Low Power Quint Exclusive OR/NOR Gate |
Fairchild Semiconductor |
14 |
100307QIX |
Low Power Quint Exclusive OR/NOR Gate |
Fairchild Semiconductor |
15 |
2N5441 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 200 V. |
Motorola |
16 |
2N5442 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. |
Motorola |
17 |
2N5443 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. |
Motorola |
18 |
2N5444 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 200 V. |
Motorola |
19 |
2N5445 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. |
Motorola |
20 |
2N5446 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. |
Motorola |
21 |
2N6072 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
22 |
2N6072A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
23 |
2N6072B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
24 |
2N6073 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V. |
Motorola |
25 |
2N6074 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
26 |
2N6074A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
27 |
2N6074B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
28 |
2N6075 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V. |
Motorola |
29 |
2SA1235A |
200mW SMD PNP transistor, maximum rating: -50V Vceo, -200mA Ic, 150 to 500 hFE. Improve on 2SA1235 |
Isahaya Electronics Corporation |
30 |
2SC3928A |
200mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 120 to 820 hFE. Improve on 2SC3928 |
Isahaya Electronics Corporation |
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