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Datasheets for VE O

Datasheets found :: 2019
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 1000307PC Low Power Quint Exclusive OR/NOR Gate Fairchild Semiconductor
2 1000307QC Low Power Quint Exclusive OR/NOR Gate Fairchild Semiconductor
3 1000307QI Low Power Quint Exclusive OR/NOR Gate Fairchild Semiconductor
4 100307 Low Power Quint Exclusive OR/NOR Gate Fairchild Semiconductor
5 100307 Low Power Quint Exclusive OR/NOR Gate National Semiconductor
6 100307D Low Power Quint Exclusive OR/NOR Gate National Semiconductor
7 100307DC Low Power Quint Exclusive OR/NOR Gate Fairchild Semiconductor
8 100307F Low Power Quint Exclusive OR/NOR Gate National Semiconductor
9 100307MW8 Low Power Quint Exclusive OR/NOR Gate National Semiconductor
10 100307PC Low Power Quint Exclusive OR/NOR Gate Fairchild Semiconductor
11 100307QC Low Power Quint Exclusive OR/NOR Gate Fairchild Semiconductor
12 100307QCX Low Power Quint Exclusive OR/NOR Gate Fairchild Semiconductor
13 100307QI Low Power Quint Exclusive OR/NOR Gate Fairchild Semiconductor
14 100307QIX Low Power Quint Exclusive OR/NOR Gate Fairchild Semiconductor
15 2N5441 Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 200 V. Motorola
16 2N5442 Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. Motorola
17 2N5443 Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. Motorola
18 2N5444 Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 200 V. Motorola
19 2N5445 Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. Motorola
20 2N5446 Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. Motorola
21 2N6072 Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. Motorola
22 2N6072A Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. Motorola
23 2N6072B Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. Motorola
24 2N6073 Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V. Motorola
25 2N6074 Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. Motorola
26 2N6074A Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. Motorola
27 2N6074B Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. Motorola
28 2N6075 Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V. Motorola
29 2SA1235A 200mW SMD PNP transistor, maximum rating: -50V Vceo, -200mA Ic, 150 to 500 hFE. Improve on 2SA1235 Isahaya Electronics Corporation
30 2SC3928A 200mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 120 to 820 hFE. Improve on 2SC3928 Isahaya Electronics Corporation


Datasheets found :: 2019
Page: | 1 | 2 | 3 | 4 | 5 |



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