| No. |
Part Name |
Description |
Manufacturer |
| 1 |
GM71VS18163CJ-5 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 50ns |
Hynix Semiconductor |
| 2 |
GM71VS18163CJ-6 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 60ns |
Hynix Semiconductor |
| 3 |
GM71VS18163CJ-7 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 70ns |
Hynix Semiconductor |
| 4 |
GM71VS18163CLJ-5 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 50ns |
Hynix Semiconductor |
| 5 |
GM71VS18163CLJ-6 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 60ns |
Hynix Semiconductor |
| 6 |
GM71VS18163CLJ-7 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 70ns |
Hynix Semiconductor |
| 7 |
HY51VS18163HG |
1M x 16Bit EDO DRAM |
Hynix Semiconductor |
| 8 |
HY51VS18163HGJ-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns |
Hynix Semiconductor |
| 9 |
HY51VS18163HGJ-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns |
Hynix Semiconductor |
| 10 |
HY51VS18163HGJ-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns |
Hynix Semiconductor |
| 11 |
HY51VS18163HGLJ-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power |
Hynix Semiconductor |
| 12 |
HY51VS18163HGLJ-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power |
Hynix Semiconductor |
| 13 |
HY51VS18163HGLJ-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power |
Hynix Semiconductor |
| 14 |
HY51VS18163HGLT-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power |
Hynix Semiconductor |
| 15 |
HY51VS18163HGLT-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power |
Hynix Semiconductor |
| 16 |
HY51VS18163HGLT-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power |
Hynix Semiconductor |
| 17 |
HY51VS18163HGT-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns |
Hynix Semiconductor |
| 18 |
HY51VS18163HGT-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns |
Hynix Semiconductor |
| 19 |
HY51VS18163HGT-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns |
Hynix Semiconductor |
| 20 |
LFTVS18-1F3 |
Low forward voltage Transil™, transient voltage suppressor |
ST Microelectronics |
| 21 |
PTVS18VP1UP |
600 W Transient Voltage Suppressor |
Nexperia |
| 22 |
PTVS18VP1UP |
600 W Transient Voltage Suppressor |
NXP Semiconductors |
| 23 |
PTVS18VP1UTP |
High-temperature 600 W Transient Voltage Suppressor |
Nexperia |
| 24 |
PTVS18VP1UTP |
PTVSxP1UTP series |
NXP Semiconductors |
| 25 |
PTVS18VS1UR |
400 W Transient Voltage Suppressor |
Nexperia |
| 26 |
PTVS18VS1UR |
400 W Transient Voltage Suppressor |
NXP Semiconductors |
| 27 |
PTVS18VS1UTR |
High-temperature 400 W Transient Voltage Suppressor |
Nexperia |
| 28 |
PTVS18VS1UTR |
High-temperature 400 W Transient Voltage Suppressor |
NXP Semiconductors |
| 29 |
PTVS18VU1UPA |
300 W Transient Voltage Suppressor |
Nexperia |
| 30 |
PTVS18VU1UPA |
300 W Transient Voltage Suppressor |
NXP Semiconductors |
| | | |
