| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N3440 |
1.000W High Voltage NPN Metal Can Transistor. 250V Vceo, 1.000A Ic, 40 - 160 hFE. |
Continental Device India Limited |
| 2 |
2N5679 |
10.000W High Voltage PNP Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 3 |
2N5680 |
10.000W High Voltage PNP Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 4 |
2N5681 |
10.000W High Voltage NPN Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 5 |
2N5682 |
10.000W High Voltage NPN Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 6 |
2N6274 |
50A silicon 250W high-power, NPN transistor |
Motorola |
| 7 |
2N6275 |
50A silicon 250W high-power, NPN transistor |
Motorola |
| 8 |
2N6276 |
50A silicon 250W high-power, NPN transistor |
Motorola |
| 9 |
2N6277 |
50A silicon 250W high-power, NPN transistor |
Motorola |
| 10 |
2N6338 |
25A 200W high-power NPN silicon transistor |
Motorola |
| 11 |
2N6339 |
25A 200W high-power NPN silicon transistor |
Motorola |
| 12 |
2N6340 |
25A 200W high-power NPN silicon transistor |
Motorola |
| 13 |
2N6341 |
25A 200W high-power NPN silicon transistor |
Motorola |
| 14 |
2SC1030 |
Silicon Transistor NPN Triple Diffused, 20~30W Hi Fi Output |
Hitachi Semiconductor |
| 15 |
2SC897 |
Silicon NPN Triple Diffused Transistor, intended for use in 35~50W Hi Fi Output |
Hitachi Semiconductor |
| 16 |
AGB3306S24Q1 |
50W High Linearity Low Noise Wideband Gain Block |
Anadigics Inc |
| 17 |
AM52-0001 |
800-960 MHz, 1.2 W high efficiency power amplifier |
MA-Com |
| 18 |
AM52-0001 |
1.2 W High Efficiency Power Amplifier 800 - 960 MHz |
Tyco Electronics |
| 19 |
AM52-0001SMB |
800-960 MHz, 1.2 W high efficiency power amplifier |
MA-Com |
| 20 |
AM52-0001SMB |
1.2 W High Efficiency Power Amplifier 800 - 960 MHz |
Tyco Electronics |
| 21 |
AM52-0001TR |
800-960 MHz, 1.2 W high efficiency power amplifier |
MA-Com |
| 22 |
AM52-0001TR |
1.2 W High Efficiency Power Amplifier 800 - 960 MHz |
Tyco Electronics |
| 23 |
AN1316 |
EVALUATION OF THE NEW HIGH VOLTAGE MDMESH(TM) VERSUS STANDARD MOSFETS |
SGS Thomson Microelectronics |
| 24 |
AN826 |
250W HIGH POWER FACTOR SUPPLY FOR TV |
SGS Thomson Microelectronics |
| 25 |
AN827 |
A 500W HIGH POWER FACTOR WITH THE L4981A CONTINUES MODE IC |
SGS Thomson Microelectronics |
| 26 |
AN880 |
THE L6569: A NEW HIGH VOLTAGE IC DRIVER FOR ELECTRONIC LAMP BALLAST |
SGS Thomson Microelectronics |
| 27 |
AS200-313 |
PHEMT GaAs IC 2 W High Linearity 5-6 GHz T/R Switch |
Skyworks Solutions |
| 28 |
AS200-313 |
As200-313:PHEMT GAAS ic 2 W High Linearity 5 6 |
Skyworks Solutions Inc |
| 29 |
AS200-313LF |
PHEMT GaAs IC 2 W High Linearity 5-6 GHz T/R Switch |
Skyworks Solutions |
| 30 |
AS225-313 |
PHEMT GaAs IC 1 W High Linearity 0.1-6 GHz SPDT Switch |
Skyworks Solutions |
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