No. |
Part Name |
Description |
Manufacturer |
1 |
MGW21N60ED |
Insulated Gate Bipolar Transistor |
Motorola |
2 |
MGW21N60ED-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
3 |
SPW21N50C3 |
for lowest Conduction Losses & fastest Switching |
Infineon |
4 |
STW21N65M5 |
N-channel 650 V, 0.150 Ohm, 17 A MDmesh(TM) V Power MOSFET in TO-247 |
ST Microelectronics |
5 |
STW21N90K5 |
N-channel 900 V, 0.25 Ohm, 18.5 A TO-247 Zener-protected SuperMESH(TM) 5 Power MOSFET |
ST Microelectronics |
6 |
STW21NM60ND |
N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in TO-247 package |
ST Microelectronics |
| | | |