| No. |
Part Name |
Description |
Manufacturer |
| 1 |
MTW6N100 |
TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM |
Motorola |
| 2 |
MTW6N100E |
TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM |
Motorola |
| 3 |
MTW6N100E |
Power MOSFET 6 Amps, 1000 Volts |
ON Semiconductor |
| 4 |
MTW6N100E-D |
Power MOSFET 6 Amps, 1000 Volts |
ON Semiconductor |
| 5 |
MTW6N60E |
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
Motorola |
| 6 |
SGW6N60UF |
Ultra-Fast IGBT |
Fairchild Semiconductor |
| 7 |
SGW6N60UFD |
Ultra-Fast IGBT |
Fairchild Semiconductor |
| 8 |
SGW6N60UFDTM |
Discrete, High Performance IGBT with Diode |
Fairchild Semiconductor |
| 9 |
STFW6N120K3 |
N-channel 1200 V, 1.95 Ohm, 6 A Zener-protected SuperMESH3(TM) Power MOSFET in TO-3PF package |
ST Microelectronics |
| 10 |
STW6N120K3 |
N-channel 1200 V, 1.95 Ohm, 6 A Zener-protected SuperMESH3(TM) Power MOSFET in TO-247 package |
ST Microelectronics |
| 11 |
STW6N95K5 |
N-channel 950 V, 1 Ohm typ., 9 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-247 package |
ST Microelectronics |
| 12 |
STW6NA80 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 13 |
STW6NA80 |
N - CHANNEL 800V - 1.8 Ohm - 5.4A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 14 |
STW6NA80 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 15 |
STW6NA90 |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 16 |
STW6NA90 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 17 |
STW6NA90 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 18 |
STW6NB100 |
N - CHANNEL 1000V - 2.3W - 5.4A - TO-247, PowerMESH MOSFET |
SGS Thomson Microelectronics |
| 19 |
STW6NB100 |
N-CHANNEL 1000V - 2.3 OHM - 5.4A - TO-247 POWERMESH MOSFET |
ST Microelectronics |
| 20 |
STW6NB90 |
N - CHANNEL 900V - 1.7 Ohm - 6.3A - TO-247 PowerMESH MOSFET |
SGS Thomson Microelectronics |
| 21 |
STW6NB90 |
N-CHANNEL MOSFET |
ST Microelectronics |
| 22 |
STW6NC90Z |
N-CHANNEL 900V 2.1OHM 5.2A TO-247 ZENER-PROTECTED POWERMESH III MOSFET |
SGS Thomson Microelectronics |
| 23 |
STW6NC90Z |
N-CHANNEL 900V 2.1OHM 5.2A TO-247 ZENER-PROTECTED POWERMESH III MOSFET |
ST Microelectronics |
| 24 |
UMW6N |
High transition frequency (dual transistors) |
ROHM |
| 25 |
W6NRD0X-0000 |
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 26 |
W6NRE0X-0000 |
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 27 |
W6NXD0K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 28 |
W6NXD0KLSR-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 29 |
W6NXD3J-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 30 |
W6NXD3K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
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