| No. |
Part Name |
Description |
Manufacturer |
| 1 |
27C4096 |
256K X 16 ELECTRICALLY ERASABLE EPROM |
Winbond Electronics |
| 2 |
28F016SA |
28F016SA 16-MBIT (1 MBIT X 16 / 2 MBIT X 8)FlashFile MEMORY |
Intel |
| 3 |
28F200BL-TB |
2-MBIT (128K x 16 / 256K x 8)LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
| 4 |
28F200BX |
2-MBIT (128K x 16 / 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
| 5 |
28F200BX-TB |
2-MBIT (128K x 16 / 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
| 6 |
28F400BL-TB |
4-MBlT (256K x 16 / 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
| 7 |
28F400BV-TB |
4-MBIT (256K X 16 / 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
| 8 |
28F400BX-TB |
4-MBIT (256K X 16 / 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
| 9 |
29400 |
512K X 8 Bit / 256K X 16 Bit CMOS 5.0 Volt-only / Boot Sector Flash Memory |
AMIC Technology |
| 10 |
41C16257 |
256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
Integrated Silicon Solution Inc |
| 11 |
42S16400A |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Silicon Solution Inc |
| 12 |
4X16E43V |
4 MEG x 16 EDO DRAM |
etc |
| 13 |
4X16E83V |
4 MEG x 16 EDO DRAM |
etc |
| 14 |
4X16E83VTW-6 |
4 MEG x 16 EDO DRAM |
etc |
| 15 |
50S116T |
512K x 2 Banks x 16 BITS SDRAM |
Ceramate |
| 16 |
50S116T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
| 17 |
50S116T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
| 18 |
50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
| 19 |
54S416T |
1M x 4 Banks x 16 BITS SDRAM |
Ceramate |
| 20 |
54S416T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
| 21 |
54S416T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
| 22 |
54S416T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
| 23 |
5962R-TBD01QTBDA |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 24 |
5962R-TBD01QTBDC |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 25 |
5962R-TBD01QTBDX |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 26 |
5962R-TBD01VTBDA |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 27 |
5962R-TBD01VTBDC |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 28 |
5962R-TBD01VTBDX |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 29 |
61C3216 |
32K x 16 HIGH-SPEED CMOS STATIC RAM |
Integrated Silicon Solution Inc |
| 30 |
61LV25616AL |
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
Integrated Silicon Solution Inc |
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