No. |
Part Name |
Description |
Manufacturer |
1 |
0912-25 |
25 W, 50 V internally matched, common base transistor |
Acrian |
2 |
0912-25-2 |
25 W, 50 V internally matched, common base transistor |
Acrian |
3 |
0912-25-3 |
25 W, 50 V internally matched, common base transistor |
Acrian |
4 |
0912-45 |
45 W, 50 V internally matched, common base transistor |
Acrian |
5 |
0912-45-2 |
45 W, 50 V internally matched, common base transistor |
Acrian |
6 |
0912-45-3 |
45 W, 50 V internally matched, common base transistor |
Acrian |
7 |
0912-7 |
7 W, 50 V internally matched, common base transistor |
Acrian |
8 |
0912-7-2 |
7 W, 50 V internally matched, common base transistor |
Acrian |
9 |
0912-7-3 |
7 W, 50 V internally matched, common base transistor |
Acrian |
10 |
13003BR |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
11 |
13003BR |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
12 |
16L102DA4 |
VACUUM FLUORESCENT DISPLAY MODULE |
Samsung Electronic |
13 |
16T202DA1J |
VACUUM FLUORESCENT DISPLAY MODULE |
Samsung Electronic |
14 |
1N4387 |
Silicon varactor diode for high-power frecquency multiplication applications |
Motorola |
15 |
1N4885 |
Silicon varactor diode for use in high efficiency multiplier circuits |
Mullard |
16 |
1N542 |
Tungsten point contact germanium diode - detection, sold by matched pairs (2x1N542) |
SESCOSEM |
17 |
1N6864 |
Schottky Modules 10-200V |
Microsemi |
18 |
1N6864US |
Schottky Modules 10-200V |
Microsemi |
19 |
1N6864USE3 |
Schottky Modules 10-200V |
Microsemi |
20 |
20S207DA4 |
VACUUM FLUORESCENT DISPLAY MODULE |
Samsung Electronic |
21 |
27C1028 |
CMOS 1048576 BIT UV ERASABLE READ ONLY MEMORY |
Fujitsu Microelectronics |
22 |
2N2415 |
Germanium ultra-high frequency transistor for very low-noise, high-gain amplifiers, oscillators, mixers, and frequency multipliers |
Motorola |
23 |
2N2416 |
Germanium ultra-high frequency transistor for very low-noise, high-gain amplifiers, oscillators, mixers, and frequency multipliers |
Motorola |
24 |
2N3279 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
25 |
2N3280 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
26 |
2N3281 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
27 |
2N3282 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
28 |
2N3583 |
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS |
Boca Semiconductor Corporation |
29 |
2N3583 |
Complementary Medium-Power High Voltage Power Transistor 35W 1A |
Motorola |
30 |
2N3584 |
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS |
Boca Semiconductor Corporation |
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