| Nr. |
Part Name |
Description |
Manufacturer |
| 1 |
BQ20Z80 |
SBS 1.1-Compliant Gas Gauge Enabled with Impedance Track(TM) Technology for Use With the bq29312 |
Texas Instruments |
| 2 |
BQ20Z80DBT |
SBS 1.1-Compliant Gas Gauge Enabled with Impedance Track(TM) Technology for Use With the bq29312 |
Texas Instruments |
| 3 |
BQ20Z80DBTR |
SBS 1.1-Compliant Gas Gauge Enabled with Impedance Track(TM) Technology for Use With the bq29312 |
Texas Instruments |
| 4 |
BUZ80 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 5 |
BUZ80 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 6 |
BUZ80 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 7 |
BUZ80 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) |
Siemens |
| 8 |
BUZ80A |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 9 |
BUZ80A |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 10 |
BUZ80A |
N - CHANNEL 800V - 2.5 Ohm - 3.8A - TO-220 FAST POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 11 |
BUZ80A |
SIPMOS Power Transistor (N channel Enhancement mode) |
Siemens |
| 12 |
BUZ80FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 13 |
BUZ80FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 14 |
BUZ80FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 15 |
CZ80PIO |
Hereinafter Referred to As PIO, is a Dual-Port Device |
etc |
