| No. |
Part Name |
Description |
Manufacturer |
| 121 |
28C011TRT4FS20 |
1 megabit (128K x 8-bit) - EEPROM |
Maxwell Technologies |
| 122 |
2C2857 |
Chip Type 2C2857 Geometry 0011 Polarity NPN |
Semicoa Semiconductor |
| 123 |
2N1011 |
PNP germanium power transistor, for military and industrial equipment |
Motorola |
| 124 |
2N1011 |
Germanium PNP Transistor |
Motorola |
| 125 |
2N2011 |
THYRISTOR |
Motorola |
| 126 |
2N2857 |
Type 2N2857 Geometry 0011 Polarity NPN |
Semicoa Semiconductor |
| 127 |
2N2857UB |
Chip Type 2C2857 Geometry 0011 Polarity NPN |
Semicoa Semiconductor |
| 128 |
2N3011 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 129 |
2N3011 |
High-Speed NPN Silicon saturated Switching Transistor |
ITT Semiconductors |
| 130 |
2N3011 |
NPN silicon low-power transistor designed for switching applications |
Motorola |
| 131 |
2N3011 |
Silicon NPN Transistor |
Motorola |
| 132 |
2N3011 |
SEPT® NPN planar epitaxial low noise transistor |
Sprague |
| 133 |
2N4011 |
Transistor |
Motorola |
| 134 |
2N5011 |
NPN Transistor |
Microsemi |
| 135 |
2N5011 |
Silicon NPN Transistor |
Motorola |
| 136 |
2N5011 |
Bipolar NPN Device |
SemeLAB |
| 137 |
2N5011 |
Silicon NPN Power Transistor, TO-5 package |
Silicon Transistor Corporation |
| 138 |
2PG011 |
Silicon N-channel enhancement IGBT |
Panasonic |
| 139 |
2SA1011 |
POWER TRANSISTORS(1.5A,160V,25W) |
MOSPEC Semiconductor |
| 140 |
2SA1011 |
Trans GP BJT PNP 160V 1.5A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 141 |
2SA1011 |
High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications |
SANYO |
| 142 |
2SA1011 |
Silicon PNP Power Transistors TO-220 package |
Savantic |
| 143 |
2SA1011 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 144 |
2SA2011 |
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications |
SANYO |
| 145 |
2SB1011 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 146 |
2SC3011 |
Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier Applications |
TOSHIBA |
| 147 |
2SC5011 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
NEC |
| 148 |
2SC5011-T1 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
NEC |
| 149 |
2SC5011-T1_-T2 |
NPN epitaxial-type silicon transistor |
NEC |
| 150 |
2SC5011-T2 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
NEC |
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