| No. |
Part Name |
Description |
Manufacturer |
| 121 |
BS616LV1012EI |
Very Low Power/Voltage CMOS SRAM |
Brilliance Semiconductor |
| 122 |
BS616LV1012EI-55 |
Very Low Power/Voltage CMOS SRAM |
Brilliance Semiconductor |
| 123 |
BS616LV1012EI-70 |
Very Low Power/Voltage CMOS SRAM |
Brilliance Semiconductor |
| 124 |
BS616LV1012EIG55 |
Very Low Power/Voltage CMOS SRAM |
Brilliance Semiconductor |
| 125 |
BS616LV1012EIG70 |
Very Low Power/Voltage CMOS SRAM |
Brilliance Semiconductor |
| 126 |
BS616LV1012EIP55 |
Very Low Power/Voltage CMOS SRAM |
Brilliance Semiconductor |
| 127 |
BS616LV1012EIP70 |
Very Low Power/Voltage CMOS SRAM |
Brilliance Semiconductor |
| 128 |
C4D10120A |
10A, 1200V, Z-Rec® Schottky, TO-220-2 package |
Wolfspeed |
| 129 |
C4D10120D |
10A, 1200V, Z-Rec® Schottky TO-247-3 package (2 x 5 A) |
Wolfspeed |
| 130 |
C4D10120E |
10A, 1200V, Z-Rec® Schottky, TO-252-2 package |
Wolfspeed |
| 131 |
C4D10120H |
1200V, Z-Rec® Schottky, TO-247-2 package |
Wolfspeed |
| 132 |
C67078-A1012-A2 |
main ratings |
Siemens |
| 133 |
C67078-A1012-A3 |
main ratings |
Siemens |
| 134 |
CEB1012 |
N-Channel Enhancement Mode Field Transistor |
Chino-Excel Technology |
| 135 |
CEB1012L |
N-Channel Enhancement Mode Field Transistor |
Chino-Excel Technology |
| 136 |
CEP1012 |
N-Channel Enhancement Mode Field Transistor |
Chino-Excel Technology |
| 137 |
CEP1012L |
N-Channel Enhancement Mode Field Transistor |
Chino-Excel Technology |
| 138 |
CFA1012 |
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 240 hFE. Complementary CFC2562 |
Continental Device India Limited |
| 139 |
CFA1012O |
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFC2562O |
Continental Device India Limited |
| 140 |
CFA1012Y |
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 120 - 240 hFE. Complementary CFC2562Y |
Continental Device India Limited |
| 141 |
CFC2562 |
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 240 hFE. Complementary CFA1012 |
Continental Device India Limited |
| 142 |
CFC2562O |
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFA1012O |
Continental Device India Limited |
| 143 |
CFC2562Y |
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 240 hFE. Complementary CFA1012Y |
Continental Device India Limited |
| 144 |
CNA1012K |
Opto-Electronic Device - Photocouplers�Photosensors - Transmissive Photosensors |
Panasonic |
| 145 |
CSA1012 |
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 240 hFE. |
Continental Device India Limited |
| 146 |
CSA1012Y |
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 30 hFE. |
Continental Device India Limited |
| 147 |
CSD10120 |
ZERO RECOVERY RECTIFIER |
etc |
| 148 |
CSD10120D |
1200V; 5A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
CREE POWER |
| 149 |
CSD10120D |
ZERO RECOVERY RECTIFIER |
etc |
| 150 |
CXG1012N |
High-Frequency SPTD Antenna Switch |
SONY |
| | | |
