No. |
Part Name |
Description |
Manufacturer |
121 |
209CNQ150 |
150V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package |
International Rectifier |
122 |
220CMQ030 |
30V 220A Schottky Common Cathode Diode in a TO-244AB Isolated package |
International Rectifier |
123 |
220CNQ030 |
30V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package |
International Rectifier |
124 |
224CNQ035 |
35V 220A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package |
International Rectifier |
125 |
224CNQ040 |
40V 220A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package |
International Rectifier |
126 |
224CNQ045 |
45V 220A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package |
International Rectifier |
127 |
225CNQ015 |
15V 220A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package |
International Rectifier |
128 |
24470 |
Bobbin Wound Surface Mount Inductors |
C&D Technologies |
129 |
244NQ035 |
Schottky Rectifier |
Microsemi |
130 |
244NQ040 |
Schottky Rectifier |
Microsemi |
131 |
244NQ045 |
Schottky Rectifier |
Microsemi |
132 |
244R7 |
Bobbin Wound Surface Mount Inductors |
C&D Technologies |
133 |
2N1244 |
Silicon PNP Transistor |
Motorola |
134 |
2N2244 |
Silicon NPN Transistor |
Motorola |
135 |
2N244 |
Silicon NPN Transistor |
Motorola |
136 |
2N244 |
Trans GP BJT NPN 30V 0.1A 3-Pin TO-18 |
New Jersey Semiconductor |
137 |
2N2440 |
Silicon NPN Transistor |
Motorola |
138 |
2N2443 |
Silicon NPN Transistor |
Motorola |
139 |
2N2444 |
Germanium PNP Transistor |
Motorola |
140 |
2N2445 |
Germanium PNP Transistor |
Motorola |
141 |
2N2446 |
Germanium PNP Transistor |
Motorola |
142 |
2N2447 |
Germanium PNP Transistor |
Motorola |
143 |
2N2448 |
Germanium PNP Transistor |
Motorola |
144 |
2N2449 |
Germanium PNP Transistor |
Motorola |
145 |
2N3244 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
146 |
2N3244 |
PNP silicon annular transistor |
Motorola |
147 |
2N3244 |
Silicon PNP Transistor |
Motorola |
148 |
2N3244 |
V(ceo): 40V; V(cbo): 40V; V(ebo): 5V; 1A; PNP silicon general purpose transistor |
Motorola |
149 |
2N3244 |
Trans GP BJT PNP 40V 1A |
New Jersey Semiconductor |
150 |
2N3244 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
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