No. |
Part Name |
Description |
Manufacturer |
121 |
2N6520 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
122 |
2N6520 |
0.625W General Purpose PNP Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE |
Continental Device India Limited |
123 |
2N6520 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR |
Diodes |
124 |
2N6520 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
125 |
2N6520 |
Ic=500mA, Vce=10V transistor |
MCC |
126 |
2N6520 |
High Voltage Transistor 625mW |
Micro Commercial Components |
127 |
2N6520 |
High Voltage Transistors |
ON Semiconductor |
128 |
2N6520 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
129 |
2N6520 |
High voltage transistor. Collector-emitter voltage: Vceo = -350V. Collector-base voltage: Vcbo = -350V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
130 |
2N6520 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR |
Zetex Semiconductors |
131 |
2N6520BU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
132 |
2N6520RL1 |
High Voltage Transistors |
ON Semiconductor |
133 |
2N6520RLRA |
High Voltage Transistors |
ON Semiconductor |
134 |
2N6520RLRM |
High Voltage Transistors |
ON Semiconductor |
135 |
2N6520TA |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
136 |
2SA1520 |
PNP Switching Transistor |
ON Semiconductor |
137 |
2SA1520 |
PNP Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance) |
SANYO |
138 |
2SC1520 |
NPN Triple Diffued Silicon Transistor |
NEC |
139 |
2SC1520 |
Silicon NPN Power Transistors TO-202 package |
Savantic |
140 |
2SC4520 |
NPN Epitaxial Planar Silicon Transistors |
SANYO |
141 |
2SC5200 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
142 |
2SC5200 |
Trans GP BJT NPN 230V 15A 3-Pin TO-264 Tube |
New Jersey Semiconductor |
143 |
2SC5200 |
Silicon NPN Power Transistors TO-3PL package |
Savantic |
144 |
2SC5200 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
145 |
2SC5200N |
Power transistor for high-speed switching applications |
TOSHIBA |
146 |
2SC5201 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE. HIGH VOLTAGE SWITCHING APPLICATIONS. |
TOSHIBA |
147 |
2SC5207A |
SILICON NPN TRIPLE DIFFUSED PLANAR |
Hitachi Semiconductor |
148 |
2SC5209 |
FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
149 |
2SC520A |
High Power Switching Transistor |
TOSHIBA |
150 |
2SC520A |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
| | | |