No. |
Part Name |
Description |
Manufacturer |
121 |
GS74116AJ-8 |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
122 |
GS74116AJ-8I |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
123 |
GS74116AJ-8IT |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
124 |
GS74116AJ-8T |
256K x 16 4Mb Asynchronous SRAM |
GSI Technology |
125 |
H7806AJ |
3-TERMINAL POSITIVE VOLTAGE REGULATOR |
Hi-Sincerity Microelectronics |
126 |
HI3026AJCQ |
8-Bit, 140 MSPS, Flash A/D Converter |
Intersil |
127 |
HY534256AJ |
256K x 4-bit CMOS DRAM |
Hynix Semiconductor |
128 |
HY534256AJ-45 |
256K x 4-bit CMOS DRAM, 45ns |
Hynix Semiconductor |
129 |
HY534256AJ-50 |
256K x 4-bit CMOS DRAM, 50ns |
Hynix Semiconductor |
130 |
HY534256AJ-60 |
256K x 4-bit CMOS DRAM, 60ns |
Hynix Semiconductor |
131 |
HY534256AJ-70 |
256K x 4-bit CMOS DRAM, 70ns |
Hynix Semiconductor |
132 |
HY534256AJ-80 |
256K x 4-bit CMOS DRAM, 80ns |
Hynix Semiconductor |
133 |
HY62256AJ |
32Kx8bit CMOS SRAM |
Hynix Semiconductor |
134 |
HY62256AJ-55 |
32Kx8bit CMOS SRAM, standby current=1mA, 55ns |
Hynix Semiconductor |
135 |
HY62256AJ-70 |
32Kx8bit CMOS SRAM, standby current=1mA, 70ns |
Hynix Semiconductor |
136 |
HY62256AJ-85 |
32Kx8bit CMOS SRAM, standby current=1mA, 85ns |
Hynix Semiconductor |
137 |
HY62256AJ-I |
32Kx8bit CMOS SRAM |
Hynix Semiconductor |
138 |
HY62256AJ-I-55 |
32Kx8bit CMOS SRAM, standby current=1mA, 55ns |
Hynix Semiconductor |
139 |
HY62256AJ-I-70 |
32Kx8bit CMOS SRAM, standby current=1mA, 70ns |
Hynix Semiconductor |
140 |
HY62256AJ-I-85 |
32Kx8bit CMOS SRAM, standby current=1mA, 85ns |
Hynix Semiconductor |
141 |
IP1526AJ |
Advanced Regulating Pulse Width Modulator |
SemeLAB |
142 |
IP1526AJ-883B |
Advanced Regulating Pulse Width Modulator |
SemeLAB |
143 |
IP1526AJ-BSS2 |
Advanced Regulating Pulse Width Modulator |
SemeLAB |
144 |
IP3526AJ |
Regulating Pulse Width Modulator |
SemeLAB |
145 |
KM41256AJ-10 |
256K x 1-bit DRAM, 100ns |
Samsung Electronic |
146 |
KM41256AJ-12 |
256K x 1-bit DRAM, 120ns |
Samsung Electronic |
147 |
KM41256AJ-15 |
256K x 1-bit DRAM, 150ns |
Samsung Electronic |
148 |
M5M54R16AJ |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM |
Mitsubishi Electric Corporation |
149 |
M5M54R16AJ-10 |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM |
Mitsubishi Electric Corporation |
150 |
M5M54R16AJ-12 |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM |
Mitsubishi Electric Corporation |
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