| No. |
Part Name |
Description |
Manufacturer |
| 121 |
2PG402 |
Insulated Gate Bipolar Transistor |
Panasonic |
| 122 |
2SK2331 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 123 |
2SK2332 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 124 |
2SK2496 |
RF Single Gate FETs |
TOSHIBA |
| 125 |
2SK2497 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 126 |
2SK2856 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 127 |
2SK3179 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE )UHF~SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 128 |
320PJT200 |
V(rrm/drm): 2000V; 1200A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 129 |
320PJT200A |
V(rrm/drm): 2000V; 1400A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 130 |
320PJT250 |
V(rrm/drm): 2000V; 1200A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 131 |
320PJT250A |
V(rrm/drm): 2500V; 1400A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 132 |
350PEQ100W |
V(rrm/drm): 1000V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 133 |
350PEQ110W |
V(rrm/drm): 1100V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 134 |
350PEQ120W |
V(rrm/drm): 1200V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 135 |
350PEQ50W |
V(rrm/drm): 500V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 136 |
350PEQ60W |
V(rrm/drm): 600V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 137 |
350PEQ70W |
V(rrm/drm): 700V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 138 |
350PEQ80W |
V(rrm/drm): 800V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 139 |
350PEQ90W |
V(rrm/drm): 900V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 140 |
350PJT100 |
V(rrm/drm): 1000V; 1200A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 141 |
350PJT120 |
V(rrm/drm): 1200V; 1200A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 142 |
350PJT140 |
V(rrm/drm): 1400V; 1200A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 143 |
350PJT160 |
V(rrm/drm): 1600V; 1200A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 144 |
3N140 |
N-Channel dual-gate silicon-nitride passivated MOS field-effect transistor |
Motorola |
| 145 |
3N140 |
Silicon n channel field effect transistor dual insulated GATE FET (Tetrode MOST), |
Mullard |
| 146 |
3N141 |
Silicon n channel field effect transistor, dual insulated GATE FET (Tetrode MOST) |
Mullard |
| 147 |
3N142 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
General Electric Solid State |
| 148 |
3N153 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
General Electric Solid State |
| 149 |
3N187 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 150 |
3N187 |
MOS Field-Effect Transistor N-Channel Depletion Type with integrated gate-protection circuit, up to 300MHz |
RCA Solid State |
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